发明授权
US08318535B2 Method of fabricating a memory card using SiP/SMT hybrid technology
有权
使用SiP / SMT混合技术制造存储卡的方法
- 专利标题： Method of fabricating a memory card using SiP/SMT hybrid technology
- 专利标题（中）： 使用SiP / SMT混合技术制造存储卡的方法
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申请号： US11769942申请日： 2007-06-28
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公开(公告)号： US08318535B2公开(公告)日： 2012-11-27
- 发明人: Ning Ye , Robert C. Miller , Cheemen Yu , Hem Takiar , Andre McKenzie
- 申请人： Ning Ye , Robert C. Miller , Cheemen Yu , Hem Takiar , Andre McKenzie
- 申请人地址： US TX Plano
- 专利权人： SanDisk Technologies Inc.
- 当前专利权人： SanDisk Technologies Inc.
- 当前专利权人地址： US TX Plano
- 代理机构： Vierra Magen Marcus & DeNiro LLP
- 主分类号： H01L21/00
- IPC分类号： H01L21/00
摘要：
A portable memory card formed from a multi-die assembly, and methods of fabricating same, are disclosed. One such multi-die assembly includes an LGA SiP semiconductor package and a leadframe-based SMT package both affixed to a PCB. The multi-die assembly thus formed may be encased within a standard lid to form a completed portable memory card, such as a standard SD™ card. Test pads on the LGA SiP package, used for testing operation of the package after it is fabricated, may also be used for physically and electrically coupling the LGA SiP package to the PCB.