MEMORY CARD FABRICATED USING SIP/SMT HYBRID TECHNOLOGY
    4.
    发明申请
    MEMORY CARD FABRICATED USING SIP/SMT HYBRID TECHNOLOGY 有权
    使用SIP / SMT混合技术制作的记忆卡

    公开(公告)号:US20090001365A1

    公开(公告)日:2009-01-01

    申请号:US11769954

    申请日:2007-06-28

    IPC分类号: H01L23/58 H01L23/48

    摘要: A portable memory card formed from a multi-die assembly, and methods of fabricating same, are disclosed. One such multi-die assembly includes an LGA SiP semiconductor package and a leadframe-based SMT package both affixed to a PCB. The multi-die assembly thus formed may be encased within a standard lid to form a completed portable memory card, such as a standard SD™ card. Test pads on the LGA SiP package, used for testing operation of the package after it is fabricated, may also be used for physically and electrically coupling the LGA SiP package to the PCB.

    摘要翻译: 公开了一种由多模组件形成的便携式存储卡及其制造方法。 一个这样的多模组件包括LGA SiP半导体封装和两个贴在PCB上的基于引线框架的SMT封装。 如此形成的多模组件可以被封装在标准盖中以形成完整的便携式存储卡,例如标准SD(TM)卡。 LGA SiP封装上用于测试封装制造后的操作的测试焊盘也可用于将LGA SiP封装物理和电耦合到PCB。