发明授权
US08318598B2 Contacts and vias of a semiconductor device formed by a hard mask and double exposure
有权
通过硬掩模和双重曝光形成的半导体器件的触点和通孔
- 专利标题： Contacts and vias of a semiconductor device formed by a hard mask and double exposure
- 专利标题（中）： 通过硬掩模和双重曝光形成的半导体器件的触点和通孔
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申请号： US12537321申请日： 2009-08-07
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公开(公告)号： US08318598B2公开(公告)日： 2012-11-27
- 发明人: Sven Beyer , Kai Frohberg , Katrin Reiche , Kerstin Ruttloff
- 申请人： Sven Beyer , Kai Frohberg , Katrin Reiche , Kerstin Ruttloff
- 申请人地址： US TX Austin
- 专利权人： Advanced Micro Devices, Inc.
- 当前专利权人： Advanced Micro Devices, Inc.
- 当前专利权人地址： US TX Austin
- 代理机构： Williams, Morgan & Amerson
- 优先权： DE102008049727 20080930
- 主分类号： H01L21/4763
- IPC分类号： H01L21/4763
摘要：
A contact element may be formed on the basis of a hard mask, which may be patterned on the basis of a first resist mask and on the basis of a second resist mask, to define an appropriate intersection area which may represent the final design dimensions of the contact element. Consequently, each of the resist masks may be formed on the basis of a photolithography process with less restrictive constraints, since at least one of the lateral dimensions may be selected as a non-critical dimension in each of the two resist masks.
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