- 专利标题: Semiconductor device for signal amplification
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申请号: US12721261申请日: 2010-03-10
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公开(公告)号: US08320854B2公开(公告)日: 2012-11-27
- 发明人: Masakazu Mizokami , Takaya Maruyama , Kazuaki Hori
- 申请人: Masakazu Mizokami , Takaya Maruyama , Kazuaki Hori
- 申请人地址: JP Kanagawa
- 专利权人: Renesas Electronics Corporation
- 当前专利权人: Renesas Electronics Corporation
- 当前专利权人地址: JP Kanagawa
- 代理机构: McDermott Will & Emery LLP
- 优先权: JP2009-059951 20090312
- 主分类号: H01Q11/12
- IPC分类号: H01Q11/12 ; H04B1/04
摘要:
A semiconductor device for transmitting-signal amplification which has a fine resolution, a high dynamic range, a small occupied area, and low power consumption, is realized. An input signal amplitude is reduced every one half by a ladder network, and a transconductance amplifier stage is arranged corresponding to each node of the ladder network. An output of the transconductance amplifier stage is coupled to an output signal line in common. According to a control word WC , the transconductance amplifier stage is enabled selectively, and the output current which appears in the output signal line is added.
公开/授权文献
- US08571496B2 Semiconductor device for signal amplification 公开/授权日:2013-10-29
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