利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

42 条记录 (耗时 0.034 秒)

    Semiconductor device for signal amplification
    2.
    发明授权
    Semiconductor device for signal amplification 有权

    公开(公告)号：US08320854B2

    公开(公告)日：2012-11-27

    申请号：US12721261

    申请日：2010-03-10

    申请人： Masakazu Mizokami ,  Takaya Maruyama ,  Kazuaki Hori

    发明人： Masakazu Mizokami ,  Takaya Maruyama ,  Kazuaki Hori

    IPC分类号： H01Q11/12 ,  H04B1/04

    摘要： A semiconductor device for transmitting-signal amplification which has a fine resolution, a high dynamic range, a small occupied area, and low power consumption, is realized. An input signal amplitude is reduced every one half by a ladder network, and a transconductance amplifier stage is arranged corresponding to each node of the ladder network. An output of the transconductance amplifier stage is coupled to an output signal line in common. According to a control word WC , the transconductance amplifier stage is enabled selectively, and the output current which appears in the output signal line is added.

    SEMICONDUCTOR DEVICE
    4.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20120206201A1

    公开(公告)日：2012-08-16

    申请号：US13360323

    申请日：2012-01-27

    申请人： Masakazu Mizokami ,  Kazuaki Hori

    发明人： Masakazu Mizokami ,  Kazuaki Hori

    IPC分类号： H03G3/20 ,  H03F3/45

    CPC分类号： H03F3/245 ,  H03F1/0266 ,  H03F1/0277 ,  H03F1/223 ,  H03F1/56 ,  H03F3/195 ,  H03F3/211 ,  H03F3/45179 ,  H03F3/45654 ,  H03F3/72 ,  H03F2200/222 ,  H03F2200/301 ,  H03F2200/453 ,  H03F2200/462 ,  H03F2200/555 ,  H03F2203/21142 ,  H03F2203/21175 ,  H03F2203/45212 ,  H03F2203/45418 ,  H03F2203/45544 ,  H03F2203/45728 ,  H03F2203/7209 ,  H03F2203/7221 ,  H03F2203/7236 ,  H03G3/3042

    摘要： A variable gain amplifier circuit includes output nodes, a plurality of amplifiers, and a detection circuit. The amplifiers are coupled in parallel with each other between the output nodes and a reference node and selectively assume an operating state in accordance with a control signal. The detection circuit outputs a detection signal according to the magnitude of an input signal to each amplifier. Each amplifier includes a first transistor, a second transistor, and a bias circuit. The first transistor receives, at its control electrode, the input signal or a signal proportional to the input signal. The second transistor is series-coupled to the first transistor between the first reference node and an output node. The bias circuit applies a DC voltage of a magnitude according to the detection signal to a control electrode of the second transistor.

    摘要翻译： 可变增益放大器电路包括输出节点，多个放大器和检测电路。 放大器在输出节点和参考节点之间彼此并联耦合，并且根据控制信号选择性地采取操作状态。 检测电路根据输入信号的幅度向每个放大器输出检测信号。 每个放大器包括第一晶体管，第二晶体管和偏置电路。 第一晶体管在其控制电极处接收与输入信号成比例的输入信号或信号。 第二晶体管与第一参考节点和输出节点之间的第一晶体管串联耦合。 偏置电路将根据检测信号的幅度的DC电压施加到第二晶体管的控制电极。

    Semiconductor device
    5.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US08618879B2

    公开(公告)日：2013-12-31

    申请号：US13360323

    申请日：2012-01-27

    申请人： Masakazu Mizokami ,  Kazuaki Hori

    发明人： Masakazu Mizokami ,  Kazuaki Hori

    IPC分类号： H03G3/20

    CPC分类号： H03F3/245 ,  H03F1/0266 ,  H03F1/0277 ,  H03F1/223 ,  H03F1/56 ,  H03F3/195 ,  H03F3/211 ,  H03F3/45179 ,  H03F3/45654 ,  H03F3/72 ,  H03F2200/222 ,  H03F2200/301 ,  H03F2200/453 ,  H03F2200/462 ,  H03F2200/555 ,  H03F2203/21142 ,  H03F2203/21175 ,  H03F2203/45212 ,  H03F2203/45418 ,  H03F2203/45544 ,  H03F2203/45728 ,  H03F2203/7209 ,  H03F2203/7221 ,  H03F2203/7236 ,  H03G3/3042

    摘要： A variable gain amplifier circuit includes output nodes, a plurality of amplifiers, and a detection circuit. The amplifiers are coupled in parallel with each other between the output nodes and a reference node and selectively assume an operating state in accordance with a control signal. The detection circuit outputs a detection signal according to the magnitude of an input signal to each amplifier. Each amplifier includes a first transistor, a second transistor, and a bias circuit. The first transistor receives, at its control electrode, the input signal or a signal proportional to the input signal. The second transistor is series-coupled to the first transistor between the first reference node and an output node. The bias circuit applies a DC voltage of a magnitude according to the detection signal to a control electrode of the second transistor.

    摘要翻译： 可变增益放大器电路包括输出节点，多个放大器和检测电路。 放大器在输出节点和参考节点之间彼此并联耦合，并且根据控制信号选择性地采取操作状态。 检测电路根据输入信号的幅度向每个放大器输出检测信号。 每个放大器包括第一晶体管，第二晶体管和偏置电路。 第一晶体管在其控制电极处接收与输入信号成比例的输入信号或信号。 第二晶体管与第一参考节点和输出节点之间的第一晶体管串联耦合。 偏置电路将根据检测信号的幅度的DC电压施加到第二晶体管的控制电极。

    SEMICONDUCTOR DEVICE
    6.
    发明申请
    SEMICONDUCTOR DEVICE 审中-公开
    半导体器件

    公开(公告)号：US20120146740A1

    公开(公告)日：2012-06-14

    申请号：US13309350

    申请日：2011-12-01

    申请人： Yoshikazu FURUTA ,  Tetsuya Heima ,  Kazuaki Hori

    发明人： Yoshikazu FURUTA ,  Tetsuya Heima ,  Kazuaki Hori

    IPC分类号： H03C3/02 ,  H03H7/00

    CPC分类号： H04B1/0475 ,  H04B1/30

    摘要： The present invention provides a semiconductor device. In the semiconductor device, a signal distributor distributes a high frequency signal generated by an oscillator and inputted to an input part to first and second signals and outputs the same from first and second output parts respectively. A modulator modulates a baseband signal with the first signal and outputs the same therefrom. An offset adjustment unit compares the second signal and the first signal that leaks from the output of the modulator to thereby adjust an offset of the baseband signal. The signal distributor includes a first capacitive element provided between the input part and the first output part, and a second capacitive element provided between the first output part and the second output part. The electrostatic capacitance of the first capacitive element is larger than that of the second capacitive element.

    摘要翻译： 本发明提供一种半导体器件。 在半导体器件中，信号分配器分配由振荡器产生的高频信号并将其输入到输入部分到第一和第二信号，并且分别从第一和第二输出部分输出。 A调制器用第一个信号调制基带信号并输出​​相同的信号。 偏移调整单元将第二信号和从调制器的输出泄漏的第一信号进行比较，从而调整基带信号的偏移。 信号分配器包括设置在输入部分和第一输出部分之间的第一电容元件和设置在第一输出部分和第二输出部分之间的第二电容元件。 第一电容元件的静电电容大于第二电容元件的静电电容。

    COMMUNICATION APPARATUS
    7.
    发明申请
    COMMUNICATION APPARATUS 审中-公开
    通讯设备

    公开(公告)号：US20110142113A1

    公开(公告)日：2011-06-16

    申请号：US12963385

    申请日：2010-12-08

    申请人： Mitsuhiko HOKAZONO ,  Tetsuya Heima ,  Kazuaki Hori

    发明人： Mitsuhiko HOKAZONO ,  Tetsuya Heima ,  Kazuaki Hori

    IPC分类号： H04L27/36 ,  H04B17/00

    CPC分类号： H04L27/0014 ,  H03D7/1441 ,  H03D7/1458 ,  H04L27/362 ,  H04L2027/0018

    摘要： The present invention provides a communication apparatus (RFIC) capable of performing a DC offset correction of an orthogonal modulation unit with a degree of accuracy higher than conventional. The orthogonal modulation unit of the RFIC includes first and second mixers, an adder and first and second switches. The first mixer receives a first local oscillation signal therein through the first switch. The second mixer receives a second local oscillation signal therein through the second switch. During calibration, a DC offset of the first mixer is adjusted in a state in which the first switch is brought to an ON state and the second switch is brought to an OFF state. Further, a DC offset of the second mixer is adjusted in a state in which the first switch is brought to an OFF state and the second switch is brought to an ON state.

    摘要翻译： 本发明提供一种能够以比常规更高的精度执行正交调制单元的DC偏移校正的通信装置（RFIC）。 RFIC的正交调制单元包括第一和第二混频器，加法器和第一和第二开关。 第一混频器通过第一开关接收第一本地振荡信号。 第二混频器通过第二开关接收第二本地振荡信号。 在校准期间，在第一开关处于导通状态并使第二开关处于断开状态的状态下调节第一混合器的直流偏移。 此外，在第一开关处于断开状态并且第二开关变为导通状态的状态下调节第二混合器的DC偏移。

    Direct conversion receiver
    9.
    发明授权
    Direct conversion receiver 有权
    直接转换接收机

    公开(公告)号：US07260373B2

    公开(公告)日：2007-08-21

    申请号：US10727612

    申请日：2003-12-05

    申请人： Yukinori Akamine ,  Satoshi Tanaka ,  Akio Yamamoto ,  Kazuaki Hori

    发明人： Yukinori Akamine ,  Satoshi Tanaka ,  Akio Yamamoto ,  Kazuaki Hori

    IPC分类号： H04B1/10

    CPC分类号： H04B1/30 ,  H03G3/3052

    摘要： In a direct conversion receiver, to cancel a DC offset generated in the baseband processing block, negative feedback arrangements comprising a gain control amplifier and a low-pass filter are respectively attached to the I and Q signal branches of the baseband block following mixer outputs. The gain control amplifier in each negative feedback circuit is gain adjusted so that the product G-B of the gain G of a primary gain control amplifier and its own gain B will be constant and thereby the DC offset is cancelled. This DC offset cancellation can be applied in a continuous receiving system with no intermittent time during a receiving operation. Capacitance elements located off-chip can be reduced to those to be used only in the low-pass filters in the negative feedback circuits, whereas many off-chip capacitance elements have been required to be inserted between each stage of gain control amplifiers in conventional baseband chains.

    摘要翻译： 在直接转换接收机中，为了消除在基带处理块中产生的DC偏移，包括增益控制放大器和低通滤波器的负反馈装置分别附加到混频器输出之后的基带块的I和Q信号分支。 每个负反馈电路中的增益控制放大器被增益调整，使得主增益控制放大器的增益G的乘积G-B和其自身的增益B将恒定，从而DC偏移被消除。 该DC偏移消除可以应用于在接收操作期间没有间歇时间的连续接收系统中。 位于片外的电容元件可以减少到仅在负反馈电路中的低通滤波器中使用的电容元件，而许多芯片外电容元件需要插入到常规基带中的增益控制放大器的每个级之间 链条

    OSCILLATION CIRCUIT AND A SEMICONDUCTOR CIRCUIT DEVICE HAVING THE OSCILLATION CIRCUIT
    10.
    发明申请
    OSCILLATION CIRCUIT AND A SEMICONDUCTOR CIRCUIT DEVICE HAVING THE OSCILLATION CIRCUIT 审中-公开
    振荡电路和具有振荡电路的半导体电路装置

    公开(公告)号：US20070146088A1

    公开(公告)日：2007-06-28

    申请号：US11614634

    申请日：2006-12-21

    申请人： Izumi ARAI ,  Kazuaki Hori

    发明人： Izumi ARAI ,  Kazuaki Hori

    IPC分类号： H03B5/08

    CPC分类号： H03B5/1228 ,  H03B5/1215 ,  H03B5/1243 ,  H03B5/1265 ,  H03B5/1268 ,  H03B2200/0048 ,  H03B2201/0216 ,  H03B2201/0266

    摘要： There is provided an LC resonance type oscillation circuit with a wide frequency variable range with a small variation of Q and capable of reducing a chip size due to no external parts required, and a communication semiconductor circuit device (high-frequency IC) having the oscillation circuit. In the LC resonance type oscillation circuit, a capacitance element and a switch element are connected in parallel between both terminals of a secondary side inductance element which is placed facing an inductance element constituting the LC resonance circuit and is connected by mutual induction to the inductance element. It is designed so that an equivalent inductance increases as the capacitance element is connected between the both terminals of the secondary side inductance element in a state where the switch element is turned OFF, and that the equivalent inductance decreases as the both terminals of the secondary side inductance element are short-circuited in a state where the switch element is turned ON.

    摘要翻译： 提供了具有较小变化范围的宽频率可变范围的LC谐振型振荡电路，并且由于不需要外部部件而能够减小芯片尺寸，并且具有振荡的通信半导体电路装置（高频IC） 电路。 在LC谐振型振荡电路中，电容元件和开关元件并联连接在二次侧电感元件的两个端子之间，二次侧电感元件面对构成LC谐振电路的电感元件，并通过互感连接到电感元件 。 其设计成使得当开关元件断开的状态下电容元件连接在次级侧电感元件的两端之间时，等效电感增加，并且等效电感随着次级侧的两端而减小 电感元件在开关元件导通的状态下短路。