发明授权
- 专利标题: Etching processes used in MEMS production
- 专利标题(中): 用于MEMS生产的蚀刻工艺
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申请号: US12210042申请日: 2008-09-12
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公开(公告)号: US08323516B2公开(公告)日: 2012-12-04
- 发明人: Ion Bita , Evgeni Gousev , Ana Londergan , Xiaoming Yan
- 申请人: Ion Bita , Evgeni Gousev , Ana Londergan , Xiaoming Yan
- 申请人地址: US CA San Diego
- 专利权人: QUALCOMM MEMS Technologies, Inc.
- 当前专利权人: QUALCOMM MEMS Technologies, Inc.
- 当前专利权人地址: US CA San Diego
- 代理机构: Knobbe Martens Olson & Bear LLP
- 主分类号: H01B13/00
- IPC分类号: H01B13/00
摘要:
The efficiency of an etching process may be increased in various ways, and the cost of an etching process may be decreased. Unused etchant may be isolated and recirculated during the etching process. Etching byproducts may be collected and removed from the etching system during the etching process. Components of the etchant may be isolated and used to general additional etchant. Either or both of the etchant or the layers being etched may also be optimized for a particular etching process.
公开/授权文献
- US20090101623A1 ETCHING PROCESSES USED IN MEMS PRODUCTION 公开/授权日:2009-04-23
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