公开(公告)号：US08323516B2

公开(公告)日：2012-12-04

申请号：US12210042

申请日：2008-09-12

申请人： Ion Bita ,  Evgeni Gousev ,  Ana Londergan ,  Xiaoming Yan

发明人： Ion Bita ,  Evgeni Gousev ,  Ana Londergan ,  Xiaoming Yan

IPC分类号： H01B13/00

CPC分类号： H01L21/32135 ,  B01D53/002 ,  B01D2257/11 ,  B01D2257/2027 ,  H01L21/31116

摘要： The efficiency of an etching process may be increased in various ways, and the cost of an etching process may be decreased. Unused etchant may be isolated and recirculated during the etching process. Etching byproducts may be collected and removed from the etching system during the etching process. Components of the etchant may be isolated and used to general additional etchant. Either or both of the etchant or the layers being etched may also be optimized for a particular etching process.

摘要翻译： 可以以各种方式增加蚀刻工艺的效率，并且可以降低蚀刻工艺的成本。 未蚀刻的蚀刻剂可以在蚀刻过程中被隔离并再循环。 蚀刻副产物可以在蚀刻过程中从蚀刻系统中收集和去除。 蚀刻剂的组分可以被分离并用于一般的另外的蚀刻剂。 蚀刻剂或被蚀刻的层中的任一个或两者也可以针对特定的蚀刻工艺进行优化。

公开(公告)号：US20090101623A1

公开(公告)日：2009-04-23

申请号：US12210042

申请日：2008-09-12

申请人： Ion Bita ,  Evgeni Gousev ,  Ana Londergan ,  Xiaoming Yan

发明人： Ion Bita ,  Evgeni Gousev ,  Ana Londergan ,  Xiaoming Yan

IPC分类号： C23F1/00

CPC分类号： H01L21/32135 ,  B01D53/002 ,  B01D2257/11 ,  B01D2257/2027 ,  H01L21/31116

摘要： The efficiency of an etching process may be increased in various ways, and the cost of an etching process may be decreased. Unused etchant may be isolated and recirculated during the etching process. Etching byproducts may be collected and removed from the etching system during the etching process. Components of the etchant may be isolated and used to general additional etchant. Either or both of the etchant or the layers being etched may also be optimized for a particular etching process.

公开(公告)号：US20070234956A1

公开(公告)日：2007-10-11

申请号：US11278700

申请日：2006-04-05

申请人： Jeremie Dalton ,  M. Karim ,  Ana Londergan

发明人： Jeremie Dalton ,  M. Karim ,  Ana Londergan

IPC分类号： C23C16/00

CPC分类号： C23C16/45565 ,  C23C16/45544 ,  C23C16/45574

摘要： A gas distribution system for a reactor having at least two distinct gas source orifice arrays displaced from one another along an axis defined by a gas flow direction from the gas source orifice arrays towards a work-piece deposition surface such that at least a lower one of the gas source orifice arrays is located between a higher one of the gas source orifice arrays and the work-piece deposition surface. Orifices in the higher one of the gas source orifice arrays may spaced an average of 0.2-0.8 times a distance between the higher one of the gas source orifice arrays and the work-piece deposition surface, while orifices in the lower one of the gas source orifice arrays may be spaced an average of 0.1-0.4 times a distance between the higher one of the gas source orifice arrays and the work-piece deposition surface.

摘要翻译： 一种用于反应器的气体分配系统，具有至少两个不同的气体源孔口阵列，其沿着由气体流动方向限定的轴线相对于工件沉积表面彼此位移，使得至少一个 气源孔阵列位于较高的一个气源孔阵列和工件沉积表面之间。 较高气体源孔阵列中的孔可以间隔平均距离更高的气源孔阵列和工件沉积表面之间的距离的0.2-0.8倍，而下一个气源中的孔 孔阵列可以间隔平均为较高气体源孔阵列和工件沉积表面之间的距离的0.1-0.4倍。

公开(公告)号：US06346477B1

公开(公告)日：2002-02-12

申请号：US09757201

申请日：2001-01-09

申请人： Alain E. Kaloyeros ,  Ana Londergan ,  Barry Arkles

发明人： Alain E. Kaloyeros ,  Ana Londergan ,  Barry Arkles

IPC分类号： H01L2144

CPC分类号： H01L21/28562 ,  C23C16/42 ,  C23C16/45525 ,  C30B25/02 ,  C30B29/02 ,  H01L21/28518

摘要： A process for the preparation of cobalt disilicide films comprises chemical vapor deposition (CVD) of cobalt from cobalt tricarbonyl nitrosyl as cobalt source precursor, capping the cobalt layer and annealing to form epitaxial cobalt disilicide on the silicon substrate.

摘要翻译： 制备二硅化二硅膜的方法包括从钴三钴基亚硝酰基钴作为钴源前体的钴的化学气相沉积（CVD），封装钴层并退火以在硅衬底上形成外延二硫化钴。