Invention Grant
- Patent Title: SRAM writing system and related apparatus
- Patent Title (中): SRAM写入系统及相关设备
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Application No.: US13070977Application Date: 2011-03-24
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Publication No.: US08325512B2Publication Date: 2012-12-04
- Inventor: Ching-Te Chuang , Wei-Chiang Shih , Hung-Yu Lee , Jihi-Yu Lin , Ming-Hsien Tu , Shyh-Jye Jou , Kun-Di Lee
- Applicant: Ching-Te Chuang , Wei-Chiang Shih , Hung-Yu Lee , Jihi-Yu Lin , Ming-Hsien Tu , Shyh-Jye Jou , Kun-Di Lee
- Applicant Address: TW Hsin-Chu
- Assignee: Faraday Technology Corp.
- Current Assignee: Faraday Technology Corp.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Priority: TW99108935 20100325
- Main IPC: G11C11/00
- IPC: G11C11/00

Abstract:
SRAM writing system and related apparatus are provided. The writing system of the invention has a dummy replica writing circuit, a negative pulse controller and at least a normal writing circuit; each normal writing circuit includes a write driver and a negative pulse supplier. While writing, the dummy replica writing circuit drives a dummy replica bit-line, such that the negative pulse controller generates a negative pulse control signal according to level of the dummy replica bit-line. In each writing circuit, when the write driver conducts to connect an associated bit-line to a bias end for driving a level transition, the negative pulse supplier switches the bias end from an operation voltage to a different negative pulse voltage according to the received negative pulse control signal.
Public/Granted literature
- US20110235444A1 SRAM WRITING SYSTEM AND RELATED APPARATUS Public/Granted day:2011-09-29
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