发明授权
US08329571B2 Deposition methods for the formation of III/V semiconductor materials, and related structures
有权
用于形成III / V半导体材料的沉积方法及相关结构
- 专利标题： Deposition methods for the formation of III/V semiconductor materials, and related structures
- 专利标题（中）： 用于形成III / V半导体材料的沉积方法及相关结构
-
申请号： US13371710申请日： 2012-02-13
-
公开(公告)号： US08329571B2公开(公告)日： 2012-12-11
- 发明人: Christophe Figuet , Pierre Tomasini
- 申请人： Christophe Figuet , Pierre Tomasini
- 申请人地址： FR Bernin
- 专利权人： Soitec
- 当前专利权人： Soitec
- 当前专利权人地址： FR Bernin
- 代理机构： TraskBritt
- 主分类号： H01L21/28
- IPC分类号： H01L21/28
摘要：
Methods of forming ternary III-nitride materials include epitaxially growing ternary III-nitride material on a substrate in a chamber. The epitaxial growth includes providing a precursor gas mixture within the chamber that includes a relatively high ratio of a partial pressure of a nitrogen precursor to a partial pressure of one or more Group III precursors in the chamber. Due at least in part to the relatively high ratio, a layer of ternary III-nitride material may be grown to a high final thickness with small V-pit defects therein. Semiconductor structures including such ternary III-nitride material layers are fabricated using such methods.