Invention Grant
- Patent Title: Device fabricated using an electroplating process
- Patent Title (中): 使用电镀工艺制造的器件
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Application No.: US12611609Application Date: 2009-11-03
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Publication No.: US08334202B2Publication Date: 2012-12-18
- Inventor: Jens Pohl , Hans-Joachim Barth , Gottfried Beer , Rainer Steiner , Werner Robl , Mathias Vaupel
- Applicant: Jens Pohl , Hans-Joachim Barth , Gottfried Beer , Rainer Steiner , Werner Robl , Mathias Vaupel
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Dicke, Billig & Czaja, PLLC
- Main IPC: H01L23/48
- IPC: H01L23/48

Abstract:
A method for fabricating a device includes providing a substrate including at least one contact and applying a dielectric layer over the substrate. The method includes applying a first seed layer over the dielectric layer, applying an inert layer over the seed layer, and structuring the inert layer, the first seed layer, and the dielectric layer to expose at least a portion of the contact. The method includes applying a second seed layer over exposed portions of the structured dielectric layer and the contact such that the second seed layer makes electrical contact with the structured first seed layer. The method includes electroplating a metal on the second seed layer.
Public/Granted literature
- US20110101532A1 DEVICE FABRICATED USING AN ELECTROPLATING PROCESS Public/Granted day:2011-05-05
Information query
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