发明授权
US08334708B1 Systems, methods, and apparatuses for complementary metal oxide semiconductor (CMOS) driver circuits using shared-charge recycling charge pump structures
有权
使用共享电荷循环电荷泵结构的互补金属氧化物半导体（CMOS）驱动电路的系统，方法和装置
- 专利标题： Systems, methods, and apparatuses for complementary metal oxide semiconductor (CMOS) driver circuits using shared-charge recycling charge pump structures
- 专利标题（中）： 使用共享电荷循环电荷泵结构的互补金属氧化物半导体（CMOS）驱动电路的系统，方法和装置
-
申请号： US13194315申请日： 2011-07-29
-
公开(公告)号： US08334708B1公开(公告)日： 2012-12-18
- 发明人: Jeongwon Cha , Taejoong Song , Changhyuk Cho , Minsik Ahn , Chang-Ho Lee , Wangmyong Woo , Jae Joon Chang
- 申请人： Jeongwon Cha , Taejoong Song , Changhyuk Cho , Minsik Ahn , Chang-Ho Lee , Wangmyong Woo , Jae Joon Chang
- 申请人地址： KR Gyunngi-Do
- 专利权人： Samsung Electro-Mechanics
- 当前专利权人： Samsung Electro-Mechanics
- 当前专利权人地址： KR Gyunngi-Do
- 主分类号： H03K19/00
- IPC分类号： H03K19/00 ; H03K19/02
摘要：
Example driver circuits can utilize shared-charge recycling charge pump structures. In particular, an example shared-charge recycling process may be applied to a clock buffer and charge transfer cells of the charge pump in a driver circuit. An example recycling process may include recycling of shared charges between the capacitors/capacitances in the charge transfer cells. An example recycling process may use the charges in one or more capacitors to charge one or more other capacitors before the charges are wasted or otherwise discharged to ground. Such recycling may significantly reduce the power consumption of the charge pump while still providing a high output voltage level, according to an example embodiment of the invention.
信息查询
