Invention Grant
- Patent Title: Method of manufacturing high frequency device structure
- Patent Title (中): 制造高频器件结构的方法
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Application No.: US13283626Application Date: 2011-10-28
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Publication No.: US08338241B2Publication Date: 2012-12-25
- Inventor: Hyung Sup Yoon , Byoung-Gue Min , Hokyun Ahn , Sang-Heung Lee , Hae Cheon Kim
- Applicant: Hyung Sup Yoon , Byoung-Gue Min , Hokyun Ahn , Sang-Heung Lee , Hae Cheon Kim
- Applicant Address: KR Daejeon
- Assignee: Electronics and Telecommunications Research Institute
- Current Assignee: Electronics and Telecommunications Research Institute
- Current Assignee Address: KR Daejeon
- Agency: Rabin & Berdo, P.C.
- Priority: KR10-2010-0123566 20101206
- Main IPC: H01L21/338
- IPC: H01L21/338
Abstract:
Provided are a method of manufacturing a normally-off mode high frequency device structure and a method of simultaneously manufacturing a normally-on mode high frequency device structure and a normally-off mode high frequency device structure on a single substrate.
Public/Granted literature
- US20120142148A1 METHOD OF MANUFACTURING HIGH FREQUENCY DEVICE STRUCTURE Public/Granted day:2012-06-07
Information query
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