Invention Grant
US08338317B2 Method for processing a semiconductor wafer or die, and particle deposition device
有权
用于处理半导体晶片或模具的方法以及颗粒沉积装置
- Patent Title: Method for processing a semiconductor wafer or die, and particle deposition device
- Patent Title (中): 用于处理半导体晶片或模具的方法以及颗粒沉积装置
-
Application No.: US13080813Application Date: 2011-04-06
-
Publication No.: US08338317B2Publication Date: 2012-12-25
- Inventor: Manfred Engelhardt , Hans-Joerg Timme , Ivan Nikitn , Manfred Frank , Thomas Kunstmann , Werner Robl , Guenther Ruhl
- Applicant: Manfred Engelhardt , Hans-Joerg Timme , Ivan Nikitn , Manfred Frank , Thomas Kunstmann , Werner Robl , Guenther Ruhl
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
According to various embodiments, a method for processing a semiconductor wafer or die is provided including supplying particles to a plasma such that the particles are activated by the plasma and spraying the activated particles on the semiconductor wafer or die to generate a particle layer on the semiconductor wafer or die.
Public/Granted literature
- US20120256323A1 METHOD FOR PROCESSING A SEMICONDUCTOR WAFER OR DIE, AND PARTICLE DEPOSITION DEVICE Public/Granted day:2012-10-11
Information query
IPC分类:
