发明授权
US08339835B2 Nonvolatile memory element and semiconductor memory device including nonvolatile memory element
有权
包括非易失性存储元件的非易失性存储元件和半导体存储器件
- 专利标题： Nonvolatile memory element and semiconductor memory device including nonvolatile memory element
- 专利标题（中）： 包括非易失性存储元件的非易失性存储元件和半导体存储器件
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申请号： US13000243申请日： 2010-04-22
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公开(公告)号： US08339835B2公开(公告)日： 2012-12-25
- 发明人: Zhiqiang Wei , Takeshi Takagi , Mitsuteru Iijima
- 申请人： Zhiqiang Wei , Takeshi Takagi , Mitsuteru Iijima
- 申请人地址： JP Osaka
- 专利权人： Panasonic Corporation
- 当前专利权人： Panasonic Corporation
- 当前专利权人地址： JP Osaka
- 代理机构： McDermott Will & Emery LLP
- 优先权： JP2009-133923 20090603
- 国际申请： PCT/JP2010/002896 WO 20100422
- 国际公布： WO2010/140296 WO 20101209
- 主分类号： G11C11/00
- IPC分类号： G11C11/00
摘要：
A nonvolatile memory element includes a current controlling element having a non-linear current-voltage characteristic, a resistance variable element which changes reversibly between a low-resistance state and a high-resistance state in which a resistance value of the resistance variable element is higher than a resistance value of the resistance variable element in the low-resistance state, in response to voltage pulses applied, and a fuse. The current controlling element, the resistance variable element and the fuse are connected in series, and the fuse is configured to be blown when the current controlling element is substantially short-circuited.
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