发明授权
US08341476B1 I-R voltage drop screening when executing a memory built-in self test 有权
执行存储器内置自检时的I-R电压降屏蔽

I-R voltage drop screening when executing a memory built-in self test
摘要:
A built-in self test (BIST) method and system for testing a memory included on an integrated circuit includes activating a component of the integrated circuit, partitioning the memory into a first part for use by non-BIST components and second part for BIST, and executing BIST on the second part of the memory while the component is operating. While the BIST is executing, the non-BIST components can access the first part of the memory and perform normal functional operations. The BIST method and system finds memory faults that are related to an I-R voltage drop due to the physical placement of the memory relative to power supply sources.
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