发明授权
US08341476B1 I-R voltage drop screening when executing a memory built-in self test
有权
执行存储器内置自检时的I-R电压降屏蔽
- 专利标题: I-R voltage drop screening when executing a memory built-in self test
- 专利标题(中): 执行存储器内置自检时的I-R电压降屏蔽
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申请号: US12607841申请日: 2009-10-28
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公开(公告)号: US08341476B1公开(公告)日: 2012-12-25
- 发明人: Hsiu-Ping Peng , Jae-Hong Lee
- 申请人: Hsiu-Ping Peng , Jae-Hong Lee
- 申请人地址: BM
- 专利权人: Marvell International Ltd.
- 当前专利权人: Marvell International Ltd.
- 当前专利权人地址: BM
- 主分类号: G01R31/28
- IPC分类号: G01R31/28 ; G11C29/00
摘要:
A built-in self test (BIST) method and system for testing a memory included on an integrated circuit includes activating a component of the integrated circuit, partitioning the memory into a first part for use by non-BIST components and second part for BIST, and executing BIST on the second part of the memory while the component is operating. While the BIST is executing, the non-BIST components can access the first part of the memory and perform normal functional operations. The BIST method and system finds memory faults that are related to an I-R voltage drop due to the physical placement of the memory relative to power supply sources.
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