发明授权
- 专利标题: Semiconductor storage
- 专利标题(中): 半导体存储
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申请号: US12713631申请日: 2010-02-26
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公开(公告)号: US08341497B2公开(公告)日: 2012-12-25
- 发明人: Kazuhiro Fukutomi , Hideaki Sato , Shinichi Kanno , Shigehiro Asano
- 申请人: Kazuhiro Fukutomi , Hideaki Sato , Shinichi Kanno , Shigehiro Asano
- 申请人地址: JP Tokyo
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JP Tokyo
- 代理机构: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权: JP2009-047304 20090227
- 主分类号: G11C29/00
- IPC分类号: G11C29/00 ; G06F11/00
摘要:
A semiconductor storage includes a receiver configured to receive a write request from a host device; a storage unit configured to hold redundancy data generation/non-generation information; a writing unit configured to write data in a semiconductor memory array and write redundancy data generation/non-generation information of the written data in the storage unit; a first data extracting unit configured to extract data whose redundancy data is not generated from among the data held by the semiconductor memory array; a first redundancy data generating unit configured to generate redundancy data; a first redundancy data writing unit configured to write the generated redundancy data in the semiconductor memory array; and a first redundancy data generation/non-generation information updating unit configured to update the redundancy data generation/non-generation information of the data whose redundancy data held by the storage unit is generated.
公开/授权文献
- US20100223531A1 SEMICONDUCTOR STORAGE 公开/授权日:2010-09-02
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