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公开(公告)号：US07984325B2
公开(公告)日：2011-07-19
申请号：US12398608
申请日：2009-03-05
IPC分类号： G06F11/00
CPC分类号： G06F11/108 , G06F11/1068
摘要： When data in one semiconductor memory device is corrupted during a padding process by a padding unit and the data cannot be recovered even by using an error correcting code for correcting a data error, a storage control device issues a data recovery request to a data recovery device. The data recovery device reads the data from other semiconductor memory device in response to the data recovery request to recover the data, and returns a recovery result to the padding unit in the storage control device to perform the padding process.
摘要翻译： 当一个半导体存储器件中的数据在填补单元的填充处理期间被破坏时，即使通过使用用于校正数据错误的纠错码也不能恢复数据，存储控制装置向数据恢复装置发出数据恢复请求 。 数据恢复装置响应于数据恢复请求从其他半导体存储装置读取数据以恢复数据，并将恢复结果返回到存储控制装置中的填充单元以执行填充处理。
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公开(公告)号：US20100223531A1
公开(公告)日：2010-09-02
申请号：US12713631
申请日：2010-02-26
CPC分类号： G06F11/108 , G06F11/1052
摘要： A semiconductor storage includes a receiver configured to receive a write request from a host device; a storage unit configured to hold redundancy data generation/non-generation information; a writing unit configured to write data in a semiconductor memory array and write redundancy data generation/non-generation information of the written data in the storage unit; a first data extracting unit configured to extract data whose redundancy data is not generated from among the data held by the semiconductor memory array; a first redundancy data generating unit configured to generate redundancy data; a first redundancy data writing unit configured to write the generated redundancy data in the semiconductor memory array; and a first redundancy data generation/non-generation information updating unit configured to update the redundancy data generation/non-generation information of the data whose redundancy data held by the storage unit is generated.
摘要翻译： 半导体存储器包括被配置为从主机设备接收写请求的接收器; 存储单元，被配置为保存冗余数据生成/非生成信息; 写入单元，被配置为在半导体存储器阵列中写入数据，并将写入的数据的冗余数据生成/非生成信息写入存储单元中; 第一数据提取单元，被配置为从半导体存储器阵列保存的数据中提取不产生冗余数据的数据; 第一冗余数据生成单元，被配置为生成冗余数据; 第一冗余数据写入单元，被配置为将所生成的冗余数据写入所述半导体存储器阵列中; 以及第一冗余数据生成/非生成信息更新单元，被配置为更新由所述存储单元保持的冗余数据生成的数据的冗余数据生成/非生成信息。
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3.发明授权Apparatus, storage system, and computer program product for prevention of data loss 有权装置，存储系统和计算机程序产品，用于防止数据丢失公开(公告)号：US08069301B2
公开(公告)日：2011-11-29
申请号：US12393654
申请日：2009-02-26
IPC分类号： G06F12/02
CPC分类号： G06F12/0246 , G06F11/108 , G06F2212/7208 , G06F2212/7211
摘要： A data control apparatus includes a mapping-table managing unit that manages a mapping table that is associated with a corrupted-data recovery function of recording data and error correcting code data as redundant data that is given separately from the data, distributed and stored in units of stripe blocks in the plural nonvolatile semiconductor memory devices, the mapping table containing arrangement information of the data and the error correcting code data; a determining unit that determines whether to differentiate frequencies of writing the data into the semiconductor memory devices; and a changing unit that changes the arrangement information by switching the data stored in units of the stripe blocks managed using the mapping table to differentiate the frequencies of writing the data into the semiconductor memory devices, when the determining unit determines that the frequencies of writing the data into the semiconductor memory devices are to be differentiated.
摘要翻译： 数据控制装置包括映射表管理单元，其管理与记录数据的损坏数据恢复功能和纠错码数据相关联的映射表，作为与数据分开地分配并以单元分布和存储的冗余数据 所述多个非易失性半导体存储器件中的条形块，所述映射表包含所述数据的排列信息和所述纠错码数据; 确定单元，其确定是否将写入数据的频率区分成半导体存储器件; 以及改变单元，其通过切换存储在使用映射表管理的条带块的单元中的数据来改变排列信息，以将写入数据的频率区分为半导体存储器件，当确定单元确定写入的频率 差分数据到半导体存储器件中。
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公开(公告)号：US08065482B2
公开(公告)日：2011-11-22
申请号：US12396006
申请日：2009-03-02
IPC分类号： G06F12/16
CPC分类号： G06F3/0656 , G06F3/0614 , G06F3/0688
摘要： A size storage unit stores therein a block size of a memory element. A buffering unit executes buffer processing configured to store data received from a RAID (Redundant Arrays of Inexpensive/Independent Disks) controller into a buffer, and to write the data stored in the buffer into the memory element. A stripe-size receiving unit receives a stripe size that indicates a size of a unit of access at time of access to the memory element by the RAID controller. Writing processing is configured to write data received from the RAID controller into the memory element without executing the buffer processing by the buffering unit, when the stripe size is n times of the block size (n is a positive integer).
摘要翻译： 大小存储单元存储存储元件的块大小。 缓冲单元执行缓冲处理，其被配置为将从RAID（廉价/独立磁盘的冗余阵列）控制器接收的数据存储到缓冲器中，并且将存储在缓冲器中的数据写入存储器元件。 条形尺寸接收单元接收指示由RAID控制器访问存储器元件时的访问单元的大小的条带大小。 写入处理被配置为当条带大小是块大小的n倍（n为正整数）时，将从RAID控制器接收的数据写入存储元件，而不执行缓冲单元的缓冲器处理。
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公开(公告)号：US20090327803A1
公开(公告)日：2009-12-31
申请号：US12395811
申请日：2009-03-02
IPC分类号： G06F11/20
CPC分类号： G06F11/108
摘要： A RAID is configured using plural nonvolatile semiconductor memory devices to enable recovery of data stored in the nonvolatile semiconductor memory devices, and data is read from the nonvolatile semiconductor memory device included in the RAID in response to a data reading request inputted from outside. When an error occurs during the reading, data for which the reading error occurs is recovered, and rewritten into an area of the nonvolatile semiconductor memory device in which the reading error occurs.
摘要翻译： 使用多个非易失性半导体存储器件来配置RAID，以使得能够恢复存储在非易失性半导体存储器件中的数据，并且响应于从外部输入的数据读取请求，从包括在RAID中的非易失性半导体存储器件读取数据。 当在读取期间发生错误时，发生读取错误的数据被恢复，并被重写到发生读取错误的非易失性半导体存储器件的区域中。
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公开(公告)号：US08341497B2
公开(公告)日：2012-12-25
申请号：US12713631
申请日：2010-02-26
CPC分类号： G06F11/108 , G06F11/1052
摘要： A semiconductor storage includes a receiver configured to receive a write request from a host device; a storage unit configured to hold redundancy data generation/non-generation information; a writing unit configured to write data in a semiconductor memory array and write redundancy data generation/non-generation information of the written data in the storage unit; a first data extracting unit configured to extract data whose redundancy data is not generated from among the data held by the semiconductor memory array; a first redundancy data generating unit configured to generate redundancy data; a first redundancy data writing unit configured to write the generated redundancy data in the semiconductor memory array; and a first redundancy data generation/non-generation information updating unit configured to update the redundancy data generation/non-generation information of the data whose redundancy data held by the storage unit is generated.
摘要翻译： 半导体存储器包括被配置为从主机设备接收写请求的接收器; 存储单元，被配置为保存冗余数据生成/非生成信息; 写入单元，被配置为在半导体存储器阵列中写入数据，并将写入的数据的冗余数据生成/非生成信息写入存储单元中; 第一数据提取单元，被配置为从半导体存储器阵列保存的数据中提取不产生冗余数据的数据; 第一冗余数据生成单元，被配置为生成冗余数据; 第一冗余数据写入单元，被配置为将所生成的冗余数据写入所述半导体存储器阵列中; 以及第一冗余数据生成/非生成信息更新单元，被配置为更新由所述存储单元保持的冗余数据生成的数据的冗余数据生成/非生成信息。
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公开(公告)号：US20090327802A1
公开(公告)日：2009-12-31
申请号：US12398608
申请日：2009-03-05
IPC分类号： G06F11/20
CPC分类号： G06F11/108 , G06F11/1068
摘要： When data in one semiconductor memory device is corrupted during a padding process by a padding unit and the data cannot be recovered even by using an error correcting code for correcting a data error, a storage control device issues a data recovery request to a data recovery device. The data recovery device reads the data from other semiconductor memory device in response to the data recovery request to recover the data, and returns a recovery result to the padding unit in the storage control device to perform the padding process.
摘要翻译： 当一个半导体存储器件中的数据在填补单元的填充处理期间被破坏时，即使通过使用用于校正数据错误的纠错码也不能恢复数据，存储控制装置向数据恢复装置发出数据恢复请求 。 数据恢复装置响应于数据恢复请求从其他半导体存储装置读取数据以恢复数据，并将恢复结果返回到存储控制装置中的填充单元以执行填充处理。
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公开(公告)号：US20090327604A1
公开(公告)日：2009-12-31
申请号：US12396006
申请日：2009-03-02
IPC分类号： G06F12/06
CPC分类号： G06F3/0656 , G06F3/0614 , G06F3/0688
摘要： A size storage unit stores therein a block size of a memory element. A buffering unit executes buffer processing configured to store data received from a RAID (Redundant Arrays of Inexpensive/Independent Disks) controller into a buffer, and to write the data stored in the buffer into the memory element. A stripe-size receiving unit receives a stripe size that indicates a size of a unit of access at time of access to the memory element by the RAID controller. Writing processing is configured to write data received from the RAID controller into the memory element without executing the buffer processing by the buffering unit, when the stripe size is n times of the block size (n is a positive integer).
摘要翻译： 大小存储单元存储存储元件的块大小。 缓冲单元执行缓冲处理，其被配置为将从RAID（廉价/独立磁盘的冗余阵列）控制器接收的数据存储到缓冲器中，并且将存储在缓冲器中的数据写入存储器元件。 条形尺寸接收单元接收指示由RAID控制器访问存储器元件时的访问单元的大小的条带大小。 写入处理被配置为当条带大小是块大小的n倍（n为正整数）时，将从RAID控制器接收的数据写入存储元件，而不执行缓冲单元的缓冲器处理。
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公开(公告)号：US08533560B2
公开(公告)日：2013-09-10
申请号：US13218812
申请日：2011-08-26
IPC分类号： H03M13/00
CPC分类号： G06F11/1048
摘要： According to an embodiment of a controller, a bit string manipulating unit manipulates a bit string of manipulation target data based on a predetermined rule. A special data setting unit generates a magic number based on a special data setting request from a host interface, obtains an error detecting code for the magic number, and sends the magic number and the error detecting code as manipulation target data to the bit string manipulating unit to obtain a manipulated manipulation target data. The special data setting unit also extracts logical block address information from the special data setting request, and instructs an access unit to write the magic number in the manipulated manipulation target data to a user data storage area and to write the error detecting code in the manipulated manipulation target data to a redundant area in a storage area located by the logical block address information.
摘要翻译： 根据控制器的实施例，位串操作单元基于预定规则来操纵操作对象数据的位串。 专用数据设定部基于来自主机接口的特殊数据设定请求生成魔术数，获得魔术数的错误检测码，将魔术号码和错误检测码作为操作对象数据发送到位串操作 单位以获得操纵的操纵目标数据。 特殊数据设定单元还从特殊数据设定请求中提取逻辑块地址信息，并指示访问单元将操作操作目标数据中的魔术数字写入用户数据存储区域，并将错误检测码写入被操纵的 将操作对象数据提供给由逻辑块地址信息定位的存储区域中的冗余区域。
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公开(公告)号：US08812774B2
公开(公告)日：2014-08-19
申请号：US13217461
申请日：2011-08-25
IPC分类号： G06F12/00
CPC分类号： G06F12/0246 , G06F11/1068
摘要： According to an embodiment, a memory system includes semiconductor memories each having a plurality of blocks; a first table; a receiving unit; a generating unit; a second table; and a writing unit. The first table includes a plurality of memory areas each associated with each block and in each of which defect information is stored. The generating unit generates a set of blocks by selecting one block to which data are to be written in each semiconductor memory based on an index number indicating one of a plurality of rows in the first table and the first table. In the second table, an index number and a channel number are stored for each logical block address in association with one another. When a write command is received by the receiving unit, the writing unit writes data to a block associated with a selected channel number among blocks constituting the set.
摘要翻译： 根据一个实施例，存储器系统包括每个具有多个块的半导体存储器; 第一张桌子 接收单元; 发电机组; 第二个表 和书写单位。 第一表包括多个存储区，每个存储区与每个块相关联，并且每个存储区存储缺陷信息。 生成单元基于指示第一表和第一表中的多行的索引号，选择要在每个半导体存储器中写入数据的一个块来生成一组块。 在第二表中，对于每个逻辑块地址彼此相关联地存储索引号和通道号。 当接收单元接收到写入命令时，写入单元将数据写入与构成该组的块中的所选频道号相关联的块。
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