发明授权
- 专利标题： Silicon dioxide layer deposited with BDEAS
- 专利标题（中）： 沉积有BDEAS的二氧化硅层
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申请号： US12794713申请日： 2010-06-04
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公开(公告)号： US08343881B2公开(公告)日： 2013-01-01
- 发明人: Yong-Won Lee , Vladimir Zubkov , Mei-Yee Shek , Li-Qun Xia , Prahallad Iyengar , Sanjeev Baluja , Scott A Hendrickson , Juan Carlos Rocha-Alvarez , Thomas Nowak , Derek R Witty
- 申请人： Yong-Won Lee , Vladimir Zubkov , Mei-Yee Shek , Li-Qun Xia , Prahallad Iyengar , Sanjeev Baluja , Scott A Hendrickson , Juan Carlos Rocha-Alvarez , Thomas Nowak , Derek R Witty
- 申请人地址： US CA Santa Clara
- 专利权人： Applied Materials, Inc.
- 当前专利权人： Applied Materials, Inc.
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Janah & Associates, P.C.
- 代理商 Ashok K. Janah
- 主分类号： H01L29/06
- IPC分类号： H01L29/06 ; H01L21/31 ; C23C16/448
摘要：
A silicon dioxide layer is deposited onto a substrate using a process gas comprising BDEAS and an oxygen-containing gas such as ozone. The silicon dioxide layer can be part of an etch-resistant stack that includes a resist layer. In another version, the silicon dioxide layer is deposited into through holes to form an oxide liner for through-silicon vias.
公开/授权文献
- US20110298099A1 SILICON DIOXIDE LAYER DEPOSITED WITH BDEAS 公开/授权日：2011-12-08
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