发明授权
- 专利标题： Semiconductor device and manufacturing method thereof
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US12628127申请日： 2009-11-30
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公开(公告)号： US08344489B2公开(公告)日： 2013-01-01
- 发明人: Hiroshi Saitoh , Toshihisa Suzuki , Shingo Sakakibara
- 申请人： Hiroshi Saitoh , Toshihisa Suzuki , Shingo Sakakibara
- 申请人地址： JP Hamamatsu-Shi
- 专利权人： Yamaha Corporation
- 当前专利权人： Yamaha Corporation
- 当前专利权人地址： JP Hamamatsu-Shi
- 代理机构： Dickstein Shapiro LLP
- 优先权： JP2005-351653 20051206; JP2005-351654 20051206; JP2005-376393 20051227; JP2006-296013 20061031
- 主分类号： H01L23/02
- IPC分类号： H01L23/02
摘要：
A semiconductor device of the invention includes: a substrate having a hollowed hollow section on a top surface; a semiconductor chip mounted in the hollow section of the substrate; and a lid having a substantially plate-shaped top plate section that opposes the substrate and covers the hollow section, and having at least one pair of side wall sections that project from a circumference of the top plate section towards the substrate and that engage with a side surface of the substrate. The substrate and the lid can be accurately positioned.
公开/授权文献
- US20100072564A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 公开/授权日：2010-03-25