发明授权
- 专利标题： Semiconductor device
- 专利标题（中）： 半导体器件
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申请号： US13293194申请日： 2011-11-10
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公开(公告)号： US08345458B2公开(公告)日： 2013-01-01
- 发明人: Masaki Shiraishi , Noboru Akiyama , Tomoaki Uno , Nobuyoshi Matsuura
- 申请人： Masaki Shiraishi , Noboru Akiyama , Tomoaki Uno , Nobuyoshi Matsuura
- 申请人地址： JP Kanagawa
- 专利权人： Renesas Electronics Corporation
- 当前专利权人： Renesas Electronics Corporation
- 当前专利权人地址： JP Kanagawa
- 代理机构： Antonelli, Terry, Stout & Kraus, LLP.
- 优先权： JP2004-345798 20041130
- 主分类号： H02M1/10
- IPC分类号： H02M1/10 ; H01L23/48 ; H05K7/02
摘要：
In order to reduce parasitic inductance of a main circuit in a power supply circuit, a non-insulated DC-DC converter is provided having a circuit in which a power MOS•FET for a high-side switch and a power MOS•FET for a low-side switch are connected in series. In the non-insulated DC-DC converter, the power MOS•FET for the high-side switch is formed by a p channel vertical MOS•FET, and the power MOS•FET for the low-side switch is formed by an n channel vertical MOS•FET. Thus, a semiconductor chip formed with the power MOS•FET for the high-side switch and a semiconductor chip formed with the power MOS•FET for the low-side switch are mounted over the same die pad and electrically connected to each other through the die pad.
公开/授权文献
- US20120049290A1 SEMICONDUCTOR DEVICE 公开/授权日：2012-03-01
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