发明授权
- 专利标题: Substrate processing apparatus
- 专利标题(中): 基板加工装置
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申请号: US12023327申请日: 2008-01-31
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公开(公告)号: US08349085B2公开(公告)日: 2013-01-08
- 发明人: Shigeru Tahara , Seiichi Takayama , Morihiro Takanashi
- 申请人: Shigeru Tahara , Seiichi Takayama , Morihiro Takanashi
- 申请人地址: JP Tokyo
- 专利权人: Tokyo Electron Limited
- 当前专利权人: Tokyo Electron Limited
- 当前专利权人地址: JP Tokyo
- 代理机构: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权: JP2007-022330 20070131
- 主分类号: C23C16/458
- IPC分类号: C23C16/458 ; C23F1/00 ; H01L21/306 ; C23C16/06 ; C23C16/22
摘要:
A substarate processing apparatus capable of reducing the capacity of a space in an internal chamber. The internal chamber is housed in a space in an external chamber. A gas supply unit supplies a process gas into the space in the internal chamber. The space in the external chamber is under a reduced pressure or filled with an inert gas. An enclosure being movable and included in the internal chamber defines the space in the internal chamber with a stage heater included in the internal chamber. When a wafer is transferred in and out by a transfer arm used to transfer the wafer, the enclosure exits out of a motion range within which the transfer arm can move.
公开/授权文献
- US20080179006A1 SUBSTRATE PROCESSING APPARATUS 公开/授权日:2008-07-31
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