发明授权
- 专利标题： Semiconductor devices and methods of manufacturing thereof
- 专利标题（中）： 半导体器件及其制造方法
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申请号： US13164139申请日： 2011-06-20
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公开(公告)号： US08349528B2公开(公告)日： 2013-01-08
- 发明人: Matthias Lipinski , Alois Gutmann , Jingyu Lian , Chandrasekhar Sarma , Haoren Zhuang
- 申请人： Matthias Lipinski , Alois Gutmann , Jingyu Lian , Chandrasekhar Sarma , Haoren Zhuang
- 申请人地址： DE Munich
- 专利权人： Infineon Technologies AG
- 当前专利权人： Infineon Technologies AG
- 当前专利权人地址： DE Munich
- 代理机构： Slater & Matsil, L.L.P.
- 主分类号： G03F1/00
- IPC分类号： G03F1/00
摘要：
Semiconductor devices and methods of manufacturing thereof are disclosed. A plurality of features is formed on a workpiece, the plurality of features being located in a first region and a second region of the workpiece. Features in the first region have a first lateral dimension, and features in the second region have a second lateral dimension, wherein the second lateral dimension is greater than the first lateral dimension. The first region is masked, and the second lateral dimension of features in the second region is reduced.
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