Invention Grant
- Patent Title: Cavity closure process for at least one microelectronic device
- Patent Title (中): 至少一个微电子器件的腔封闭工艺
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Application No.: US12693867Application Date: 2010-01-26
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Publication No.: US08349660B2Publication Date: 2013-01-08
- Inventor: Gilles Delapierre , Bernard Diem , Francois Perruchot
- Applicant: Gilles Delapierre , Bernard Diem , Francois Perruchot
- Applicant Address: FR Paris
- Assignee: Commissariat a l'Energie Atomique
- Current Assignee: Commissariat a l'Energie Atomique
- Current Assignee Address: FR Paris
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: FR0950494 20090128
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
A process for closure of at least one cavity intended to encapsulate or be part of a microelectronic device, comprising the following steps: a) Producing a cavity in a first substrate comprising a first layer traversed by an opening forming an access to the cavity; b) Producing a portion of bond material around the opening, on a surface of the first layer located on the side opposite the cavity; c) Producing, on a second substrate, a portion of fusible material, with a deposition of the fusible material on the second substrate and the use of a mask; d) Placing the portion of fusible material in contact with the portion of bond material; e) Forming a plug for the opening, which adheres to the portion of bond material, by melting and then solidification of the fusible material; f) Separating the plug and the second substrate.
Public/Granted literature
- US20100190301A1 CAVITY CLOSURE PROCESS FOR AT LEAST ONE MICROELECTRONIC DEVICE Public/Granted day:2010-07-29
Information query
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