发明授权
- 专利标题： Cavity closure process for at least one microelectronic device
- 专利标题（中）： 至少一个微电子器件的腔封闭工艺
-
申请号： US12693867申请日： 2010-01-26
-
公开(公告)号： US08349660B2公开(公告)日： 2013-01-08
- 发明人: Gilles Delapierre , Bernard Diem , Francois Perruchot
- 申请人： Gilles Delapierre , Bernard Diem , Francois Perruchot
- 申请人地址： FR Paris
- 专利权人： Commissariat a l'Energie Atomique
- 当前专利权人： Commissariat a l'Energie Atomique
- 当前专利权人地址： FR Paris
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权： FR0950494 20090128
- 主分类号： H01L21/00
- IPC分类号： H01L21/00
摘要：
A process for closure of at least one cavity intended to encapsulate or be part of a microelectronic device, comprising the following steps: a) Producing a cavity in a first substrate comprising a first layer traversed by an opening forming an access to the cavity; b) Producing a portion of bond material around the opening, on a surface of the first layer located on the side opposite the cavity; c) Producing, on a second substrate, a portion of fusible material, with a deposition of the fusible material on the second substrate and the use of a mask; d) Placing the portion of fusible material in contact with the portion of bond material; e) Forming a plug for the opening, which adheres to the portion of bond material, by melting and then solidification of the fusible material; f) Separating the plug and the second substrate.
公开/授权文献
信息查询
IPC分类:
