Invention Grant
- Patent Title: Fabrication of a semiconductor nanoparticle embedded insulating film luminescence device
- Patent Title (中): 半导体纳米颗粒嵌入绝缘膜发光装置的制造
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Application No.: US12267698Application Date: 2008-11-10
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Publication No.: US08349745B2Publication Date: 2013-01-08
- Inventor: Pooran Chandra Joshi , Hao Zhang , Jiandong Huang , Apostolos T. Voutsas
- Applicant: Pooran Chandra Joshi , Hao Zhang , Jiandong Huang , Apostolos T. Voutsas
- Applicant Address: US WA Camas
- Assignee: Sharp Laboratory of America, Inc.
- Current Assignee: Sharp Laboratory of America, Inc.
- Current Assignee Address: US WA Camas
- Agency: Law Office of Gerald Maliszewski
- Agent Gerald Maliszewski
- Main IPC: H01L21/31
- IPC: H01L21/31
Abstract:
A method is provided for fabricating a semiconductor nanoparticle embedded Si insulating film for short wavelength luminescence applications. The method provides a bottom electrode, and deposits a semiconductor nanoparticle embedded Si insulating film, including the element of N, O, or C, overlying the bottom electrode. After annealing, a semiconductor nanoparticle embedded Si insulating film has a peak photoluminescence (PL) at a wavelength in the range of 475 to 750 nanometers.
Public/Granted literature
- US20090058266A1 Fabrication of a Semiconductor Nanoparticle Embedded Insulating Film Luminescence Device Public/Granted day:2009-03-05
Information query
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