Invention Grant
US08354335B2 Apparatus and associated method for making a floating gate cell with increased overlay between the control gate and floating gate
有权
用于制造浮动栅极单元的装置和相关方法，其在控制栅极和浮动栅极之间具有增加的覆盖
- Patent Title: Apparatus and associated method for making a floating gate cell with increased overlay between the control gate and floating gate
- Patent Title (中): 用于制造浮动栅极单元的装置和相关方法，其在控制栅极和浮动栅极之间具有增加的覆盖
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Application No.: US12975737Application Date: 2010-12-22
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Publication No.: US08354335B2Publication Date: 2013-01-15
- Inventor: Chen-Chin Liu , Lan Ting Huang , Ling Kuey Yang , Po Hsuan Wu
- Applicant: Chen-Chin Liu , Lan Ting Huang , Ling Kuey Yang , Po Hsuan Wu
- Applicant Address: TW
- Assignee: Macronix International Co., Ltd.
- Current Assignee: Macronix International Co., Ltd.
- Current Assignee Address: TW
- Agency: Baker & McKenzie LLP
- Main IPC: H01L21/3205
- IPC: H01L21/3205 ; H01L21/4763
Abstract:
A method for fabricating a floating gate memory device comprises using a buried diffusion oxide that is below the floating gate thereby producing an increased step height between the floating gate and the buried diffusion oxide. The increased step height can produce a higher GCR, while still allowing decreased cell size using a virtual ground array design.
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