Invention Grant
- Patent Title: MIM transistor
- Patent Title (中): MIM晶体管
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Application No.: US12984465Application Date: 2011-01-04
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Publication No.: US08354725B2Publication Date: 2013-01-15
- Inventor: Benoit Froment , Etienne Robilliart
- Applicant: Benoit Froment , Etienne Robilliart
- Applicant Address: FR Crolles
- Assignee: STMicroelectronics Crolles 2 SAS
- Current Assignee: STMicroelectronics Crolles 2 SAS
- Current Assignee Address: FR Crolles
- Agency: Seed IP Law Group PLLC
- Priority: FR0653920 20060925
- Main IPC: H01L21/70
- IPC: H01L21/70 ; H01L27/118
Abstract:
The invention concerns a conducting layer having a thickness of between 1 and 5 atoms, an insulated gate being formed over a part of the conducting layer.
Public/Granted literature
- US20110095375A1 MIM TRANSISTOR Public/Granted day:2011-04-28
Information query
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