发明授权
- 专利标题： Semiconductor device and method of manufacturing semiconductor device
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US12618402申请日： 2009-11-13
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公开(公告)号： US08357580B2公开(公告)日： 2013-01-22
- 发明人: Atsuhiro Kinoshita , Yoshinori Tsuchiya , Junji Koga
- 申请人： Atsuhiro Kinoshita , Yoshinori Tsuchiya , Junji Koga
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- 优先权： JP2005-19293 20050127
- 主分类号： H01L21/336
- IPC分类号： H01L21/336 ; H01L21/4763
摘要：
A semiconductor device includes a semiconductor substrate; a first gate insulation film formed on the semiconductor substrate; a second gate insulation film formed on the semiconductor substrate; a first gate electrode formed on the first gate insulation film and fully silicided; and a second gate electrode formed on the second gate insulation film and fully silicided, a gate length or a gate width of the second gate electrode being larger than that of the first gate electrode, and a thickness of the second gate electrode being smaller than that of the first gate electrode.
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