发明授权
US08357590B2 Method for producing semiconductor wafers composed of silicon having a diameter of at least 450 mm, and semiconductor wafer composed of silicon having a diameter of 450 mm
有权
由直径为450mm以上的硅构成的半导体晶片的制造方法以及由直径为450mm的硅构成的半导体晶片
- 专利标题： Method for producing semiconductor wafers composed of silicon having a diameter of at least 450 mm, and semiconductor wafer composed of silicon having a diameter of 450 mm
- 专利标题（中）： 由直径为450mm以上的硅构成的半导体晶片的制造方法以及由直径为450mm的硅构成的半导体晶片
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申请号： US13005584申请日： 2011-01-13
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公开(公告)号： US08357590B2公开(公告)日： 2013-01-22
- 发明人: Georg Raming , Walter Heuwieser , Andreas Sattler , Alfred Miller
- 申请人： Georg Raming , Walter Heuwieser , Andreas Sattler , Alfred Miller
- 申请人地址： DE Munich
- 专利权人： Siltronic AG
- 当前专利权人： Siltronic AG
- 当前专利权人地址： DE Munich
- 代理机构： Brooks Kushman P.C.
- 优先权： DE102010005100 20100120
- 主分类号： H01L21/46
- IPC分类号： H01L21/46
摘要：
Silicon semiconductor wafers are produced by: pulling a single crystal with a conical section and an adjoining cylindrical section having a diameter ≧450 mm and a length of ≧800 mm from a melt in a crucible, wherein in pulling the transition from the conical section to the cylindrical section, the pulling rate is at least 1.8 times higher than the average pulling rate during the pulling of the cylindrical section; cooling the growing single crystal with a cooling power of at least 20 kW; feeding heat from the side wall of the crucible to the single crystal, wherein a gap having a height of ≧70 mm is present between a heat shield surrounding the single crystal and the melt surface.
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