发明授权
- 专利标题： Unidirectional spin torque transfer magnetic memory cell structure
- 专利标题（中）： 单向自旋转矩传递磁存储单元结构
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申请号： US13357527申请日： 2012-01-24
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公开(公告)号： US08358531B2公开(公告)日： 2013-01-22
- 发明人: Jun Liu , Gurtej Sandhu
- 申请人： Jun Liu , Gurtej Sandhu
- 申请人地址： US ID Boise
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 当前专利权人地址： US ID Boise
- 代理机构： Fletcher Yoder
- 主分类号： G11C11/14
- IPC分类号： G11C11/14 ; G11C11/15 ; G11C11/16 ; G11C11/02
摘要：
Spin torque transfer magnetic random access memory devices configured to be programmed unidirectionally and methods of programming such devices. The devices include memory cells having two pinned layers and a free layer therebetween. By utilizing two pinned layers, the spin torque effect on the free layer from each of the two pinned layers, respectively, allows the memory cells to be programmed with unidirectional currents.
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