Invention Grant
- Patent Title: Methods forming high dielectric target layer
- Patent Title (中): 形成高介电目标层的方法
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Application No.: US12648377Application Date: 2009-12-29
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Publication No.: US08361551B2Publication Date: 2013-01-29
- Inventor: Jong-Cheol Lee , Ki-Yeon Park , Jun-Noh Lee
- Applicant: Jong-Cheol Lee , Ki-Yeon Park , Jun-Noh Lee
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2008-0136505 20081230
- Main IPC: C23C16/40
- IPC: C23C16/40

Abstract:
In a method of forming a target layer having a uniform composition of constituent materials, a first precursor including a first central atom and a ligand is chemisorbed on a first reaction site of an object. The ligand or the first central atom is then removed to form a second reaction site. A second precursor including a second central atom is then chemisorbed on the second reaction site.
Public/Granted literature
- US20100167554A1 METHODS FORMING HIGH DIELECTRIC TARGET LAYER Public/Granted day:2010-07-01
Information query
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