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US08361551B2 Methods forming high dielectric target layer 有权
形成高介电目标层的方法

Methods forming high dielectric target layer
Abstract:
In a method of forming a target layer having a uniform composition of constituent materials, a first precursor including a first central atom and a ligand is chemisorbed on a first reaction site of an object. The ligand or the first central atom is then removed to form a second reaction site. A second precursor including a second central atom is then chemisorbed on the second reaction site.
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