A method and system for dicing semiconductor devices from semiconductor thin films. A semiconductor film, backed by a metal layer, is bonded by an adhesive layer to a flexible translucent substrate. Reference features define device boundaries. An ultraviolet laser beam is aligned to the reference features and cuts through the semiconductor film, the metal layer and partially into the adhesive layer, cutting a frontside street along a real or imaginary scribe line on the cutting path. An infrared laser beam is aligned to the trough of the frontside street from the back surface of the flexible substrate, or the scribe lines are mapped to the back surface of the flexible substrate. The infrared laser beam cuts through the flexible substrate and the majority of the thickness of the adhesive layer, cutting a backside street along the scribe line. The backside street overlaps or cuts through to the frontside street, thereby separating the semiconductor devices.