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    Laser cutting and chemical edge clean for thin-film solar cells
    1.
    发明授权
    Laser cutting and chemical edge clean for thin-film solar cells 有权
    激光切割和化学边缘清洁薄膜太阳能电池

    公开(公告)号：US08728933B1

    公开(公告)日：2014-05-20

    申请号：US13223133

    申请日：2011-08-31

    申请人： Michael Andres ,  Laila Mattos ,  Daniel G. Patterson ,  Gang He

    发明人： Michael Andres ,  Laila Mattos ,  Daniel G. Patterson ,  Gang He

    IPC分类号： H01L21/4763

    CPC分类号： H01L31/18 ,  H01L21/78

    摘要： A method of kerf formation and treatment for solar cells and semiconductor films and a system therefor are described. A semiconductor film is backed by a first metal layer and topped by a second metal layer. A reference feature is defined on the film. An ultraviolet laser beam is aligned to the reference feature. A kerf is cut along the reference feature, using the ultraviolet laser beam. The beam cuts through the second metal layer, through the film and through the first metal layer. Cutting leaves debris deposited on walls of the kerf. The debris is cleaned off of the walls, using an acid-based solvent. In the case of solar cells, respective first terminals of the solar cells are electrically isolated by the cleaned kerf, and respective negative terminals of the solar cells are electrically isolated by the cleaned kerf.

    摘要翻译： 对太阳能电池和半导体膜的切口形成和处理方法及其系统进行描述。 半导体膜由第一金属层支撑并且被第二金属层顶起。 电影中定义了参考功能。 紫外激光束与参考特征对齐。 使用紫外线激光束沿着参考特征切割切口。 光束穿过第二金属层，穿过膜并穿过第一金属层。 切割叶片残留在切口的墙壁上。 使用酸性溶剂将碎屑从墙壁上清除。 在太阳能电池的情况下，太阳能电池的各自的第一端子被清洁的切口电隔离，并且太阳能电池的各个负极通过清洁的切口电隔离。

    Aligned frontside backside laser dicing of semiconductor films
    2.
    发明授权
    Aligned frontside backside laser dicing of semiconductor films 有权
    半导体膜的背面激光切割

    公开(公告)号：US08361828B1

    公开(公告)日：2013-01-29

    申请号：US13222750

    申请日：2011-08-31

    申请人： Daniel G. Patterson ,  Laila Mattos ,  Gang He

    发明人： Daniel G. Patterson ,  Laila Mattos ,  Gang He

    IPC分类号： H01L21/78

    CPC分类号： H01L21/78 ,  B23K26/032 ,  B23K26/0619 ,  B23K26/0624 ,  B23K26/082 ,  B23K26/0853 ,  B23K26/361 ,  B23K26/40 ,  B23K2101/40 ,  B23K2103/172 ,  B23K2103/42 ,  B23K2103/50 ,  B23K2103/52

    摘要： A method and system for dicing semiconductor devices from semiconductor thin films. A semiconductor film, backed by a metal layer, is bonded by an adhesive layer to a flexible translucent substrate. Reference features define device boundaries. An ultraviolet laser beam is aligned to the reference features and cuts through the semiconductor film, the metal layer and partially into the adhesive layer, cutting a frontside street along a real or imaginary scribe line on the cutting path. An infrared laser beam is aligned to the trough of the frontside street from the back surface of the flexible substrate, or the scribe lines are mapped to the back surface of the flexible substrate. The infrared laser beam cuts through the flexible substrate and the majority of the thickness of the adhesive layer, cutting a backside street along the scribe line. The backside street overlaps or cuts through to the frontside street, thereby separating the semiconductor devices.

    摘要翻译： 一种用于从半导体薄膜切割半导体器件的方法和系统。 由金属层支撑的半导体膜通过粘合剂层粘合到柔性半透明基板上。 参考功能定义设备边界。 将紫外线激光束对准参考特征并切割穿过半导体膜，金属层并部分地进入粘合剂层，沿着切割路径上的实际或虚拟划线切割前沿街道。 红外激光束从柔性基板的后表面与前面街道的槽对准，或者将划线映射到柔性基板的后表面。 红外激光束穿过柔性基板和粘合剂层的大部分厚度，沿着划线切割一条背面的街道。 背面街道重叠或切割到前方街道，从而分离半导体器件。

    Two beam backside laser dicing of semiconductor films
    3.
    发明授权
    Two beam backside laser dicing of semiconductor films 有权
    半导体薄膜的两束背面激光切割

    公开(公告)号：US08399281B1

    公开(公告)日：2013-03-19

    申请号：US13222617

    申请日：2011-08-31

    申请人： Daniel G. Patterson ,  Laila Mattos

    发明人： Daniel G. Patterson ,  Laila Mattos

    IPC分类号： H01L21/78

    CPC分类号： H01L21/78 ,  B23K26/032 ,  B23K26/042 ,  B23K26/364 ,  B23K26/40 ,  B23K2103/172 ,  H01L31/1876 ,  Y02E10/50 ,  Y02P70/521

    摘要： A method and system for dicing semiconductor devices from a semiconductor film. A semiconductor film, backed by a metal layer, is bonded by an adhesive layer to a flexible translucent substrate. Reference features on the film are used to describe a cutting path like a scribe line. An infrared laser beam is aligned to the scribe lines from the back surface of the flexible substrate. The infrared laser beam cuts through the flexible substrate and the majority of the thickness of the adhesive layer, cutting a first trough of a backside street along a scribe line defined by the reference features. An ultraviolet laser beam is aligned to the backside street, or to the scribe line as mapped to the back surface of the flexible substrate. The ultraviolet laser cuts through the metal layer and the semiconductor film, cutting a second trough along the scribe line. The second trough extends from the bottom of and deepens the first trough, cutting through the semiconductor film.

    摘要翻译： 一种用于从半导体膜切割半导体器件的方法和系统。 由金属层支撑的半导体膜通过粘合剂层粘合到柔性半透明基板上。 胶片上的参考特征用于描述像划线一样的切割路径。 红外激光束从柔性基板的背面对准划线。 红外激光束穿过柔性基板和粘合剂层的大部分厚度，沿着由参考特征限定的划线切割背面街道的第一槽。 紫外线激光束对准到背面的街道，或者对准划线到柔性基板的后表面。 紫外线激光切割金属层和半导体膜，沿切割线切割第二槽。 第二槽从底部延伸并加深第一槽，切割半导体膜。

    Laser cutting through two dissimilar materials separated by a metal foil
    4.
    发明授权
    Laser cutting through two dissimilar materials separated by a metal foil 有权
    通过金属箔分离的两种不同材料进行激光切割

    公开(公告)号：US08728849B1

    公开(公告)日：2014-05-20

    申请号：US13222686

    申请日：2011-08-31

    申请人： Laila Mattos ,  Daniel G. Patterson

    发明人： Laila Mattos ,  Daniel G. Patterson

    IPC分类号： H01L21/78 ,  H01L21/302

    CPC分类号： B23K26/142 ,  B23K26/40 ,  B23K2101/40 ,  B23K2103/50 ,  H01L31/0392 ,  H01L31/03926 ,  H01L31/18 ,  Y02E10/50

    摘要： A method of laser cutting through dissimilar materials separated by a metal foil. A material stack includes a semiconductor layer or film, with a metal foil layer attached to the back surface. The metal foil layer is attached to an insulative support material layer. A laser parameter is selected and optimized for the material stack. A laser beam creates a kerf in the material stack down to the metal foil layer. The laser beam removes metal through the kerf primarily by gasification rather than melting. Kerf formation continues after optimization of the laser parameter for removal of material from the remaining layers. A debris field resulting from the laser cutting of the metal layer is reduced and/or a portion of the debris is removed in an assisted manner as the beam cuts. The materials are diced by cutting the kerf through all materials.

    摘要翻译： 激光切割通过金属箔分离的不同材料的方法。 材料堆叠包括半导体层或膜，金属箔层附着到背面。 金属箔层附着在绝缘支撑材料层上。 为材料堆选择和优化激光参数。 激光束在材料堆叠中产生切割至金属箔层的切口。 激光束主要通过气化而不是熔化来去除切屑上的金属。 在优化用于从剩余层中去除材料的激光参数之后继续进行Kerf形成。 当光束切割时，由金属层的激光切割产生的碎片场减少和/或一部分碎屑被辅助地去除。 通过切割所有材料切割材料来切割材料。

    Method for creation of inclined microstructures using a scanned laser image
    6.
    发明授权
    Method for creation of inclined microstructures using a scanned laser image 失效
    使用扫描激光图像产生倾斜微结构的方法

    公开(公告)号：US06313434B1

    公开(公告)日：2001-11-06

    申请号：US09321799

    申请日：1999-05-27

    申请人： Daniel G. Patterson ,  Michael A. Kadar-Kallen

    发明人： Daniel G. Patterson ,  Michael A. Kadar-Kallen

    IPC分类号： B23K2636

    CPC分类号： B23K26/08 ,  B23K26/02 ,  B23K26/082 ,  B23K26/361

    摘要： A system for controlling inclination and depth of ablation of a polymer planar waveguide or semiconductor wafer substrate utilizes a laser which directs the beam at the substrate to ablate portions of the surface thereof and a translatable stage for moving the substrate relative to the beam to create a path of ablated material from the surface. The velocity of the substrate is controlled relative to ablation rate of material from the surface or the dimension of the beam is controlled along the path of ablated material to create a desired inclination and depth of ablated material in the path. The depth of ablated material is a function of the beam width along the path of ablated material, workpiece velocity and ablation rate and is substantially controlled by the formula: D=R(W/V) where D is the depth of ablated material, R is ablation rate, W is beam dimension along the path of ablated material, and V is workpiece velocity.

    摘要翻译： 用于控制聚合物平面波导或半导体晶片衬底的消融倾斜度和深度的系统利用一种激光器，该激光器将衬底上的光束引导到其表面的部分，以及用于使衬底相对于光束移动的平移台， 从表面烧蚀材料的路径。 衬底的速度相对于来自表面的材料的消融速率受到控制，或者沿着烧蚀材料的路径控制梁的尺寸，以产生在路径中烧蚀的材料的期望的倾斜度和深度。 消融材料的深度是沿着烧蚀材料，工件速度和烧蚀速率的路径的波束宽度的函数，并且基本上由以下公式控制：其中D是烧蚀材料的深度，R是烧蚀速率，W是光束尺寸 沿着烧蚀材料的路径，V是工件的速度。

    Multi-wavelength programmable laser processing mechanisms and apparatus
    7.
    发明授权
    Multi-wavelength programmable laser processing mechanisms and apparatus 失效
    多波长可编程激光加工机构及装置

    公开(公告)号：US5620618A

    公开(公告)日：1997-04-15

    申请号：US430480

    申请日：1995-04-28

    申请人： Candace J. Freedenberg ,  David C. Long ,  Joshua M. Cobb ,  Mark J. LaPlante ,  Uldis A. Ziemins ,  Daniel G. Patterson ,  James G. Balz

    发明人： Candace J. Freedenberg ,  David C. Long ,  Joshua M. Cobb ,  Mark J. LaPlante ,  Uldis A. Ziemins ,  Daniel G. Patterson ,  James G. Balz

    IPC分类号： B23K26/04 ,  H05K3/00 ,  B23K26/08

    CPC分类号： B23K26/04 ,  B23K26/043 ,  H05K3/0017

    摘要： A desired design for electronic structures is converted into a graphic design format and sorted into a pseudo-raster format corresponding to scan lines. A laser or other machining beam is controlled by a separate tracking beam utilizing a mid-objective scanning system. The firing frequency of the machining beam is determined by the position of the tracking beam on a detector, as compared to the scan line data. Accuracy is verified by detection of plume or spectra generated during machining. Alignment of the machining and tracking beams is by interferometric methods. The system improves optical performance parameters of telecentricity, angle of scanned beam line, location of line in which the scanned line resides, astigmatism and field curvature.

    摘要翻译： 将期望的电子结构设计转换为图形设计格式，并将其分类为与扫描线对应的伪光栅格式。 利用中间物镜扫描系统，通过单独的跟踪光束来控制激光或其它加工光束。 与扫描线数据相比，加工光束的点火频率由跟踪光束在检测器上的位置确定。 通过检测在加工过程中产生的羽流或光谱来验证精度。 加工和跟踪梁的对准是通过干涉测量方法。 该系统提高了远心性的光学性能参数，扫描光束线的角度，扫描线所在的线的位置，散光和场曲率。

    Interferometric measurement and alignment technique for laser scanners
    8.
    发明授权
    Interferometric measurement and alignment technique for laser scanners 失效
    激光扫描仪的干涉测量和对准技术

    公开(公告)号：US5541731A

    公开(公告)日：1996-07-30

    申请号：US444302

    申请日：1995-05-18

    申请人： Candace J. Freedenberg ,  David C. Long ,  Joshua M. Cobb ,  Mark J. LaPlante ,  Uldis A. Ziemins ,  Daniel G. Patterson ,  James G. Balz

    发明人： Candace J. Freedenberg ,  David C. Long ,  Joshua M. Cobb ,  Mark J. LaPlante ,  Uldis A. Ziemins ,  Daniel G. Patterson ,  James G. Balz

    IPC分类号： B23K26/04 ,  H05K3/00 ,  G01B9/02

    CPC分类号： B23K26/04 ,  B23K26/043 ,  H05K3/0017

    摘要： A desired design for electronic structures is converted into a graphic design format and sorted into a pseudo-raster format corresponding to scan lines. A laser or other machining beam is controlled by a separate tracking beam utilizing a mid-objective scanning system. The firing frequency of the machining beam is determined by the position of the tracking beam on a detector, as compared to the scan line data. Accuracy is verified by detection of plume or spectra generated during machining. Evaluation and alignment of the machining and tracking beams is by interferometric methods. The system improves optical performance parameters of telecentricity, angle of scanned beam line, location of line in which the scanned line resides, astigmatism and field curvature.

    摘要翻译： 将期望的电子结构设计转换为图形设计格式，并将其分类为与扫描线对应的伪光栅格式。 利用中间物镜扫描系统，通过单独的跟踪光束来控制激光或其它加工光束。 与扫描线数据相比，加工光束的点火频率由跟踪光束在检测器上的位置确定。 通过检测在加工过程中产生的羽流或光谱来验证精度。 加工和跟踪光束的评估和对准是通过干涉测量方法。 该系统提高了远心性的光学性能参数，扫描光束线的角度，扫描线所在的线的位置，散光和场曲率。

    Multi-wavelength programmable laser processing mechanisms and apparatus utilizing spectrometer verification
    10.
    发明授权
    Multi-wavelength programmable laser processing mechanisms and apparatus utilizing spectrometer verification 失效
    使用光谱仪验证的多波长可编程激光处理机构和装置

    公开(公告)号：US5626778A

    公开(公告)日：1997-05-06

    申请号：US465688

    申请日：1995-06-06

    申请人： Candace J. Freedenberg ,  David C. Long ,  Joshua M. Cobb ,  Mark J. LaPlante ,  Uldis A. Ziemins ,  Daniel G. Patterson ,  James G. Balz

    发明人： Candace J. Freedenberg ,  David C. Long ,  Joshua M. Cobb ,  Mark J. LaPlante ,  Uldis A. Ziemins ,  Daniel G. Patterson ,  James G. Balz

    IPC分类号： B23K26/04 ,  H05K3/00

    CPC分类号： B23K26/04 ,  B23K26/043 ,  H05K3/0017

    摘要： A desired design for electronic structures is converted into a graphic design format and sorted into a pseudo-raster format corresponding to scan lines. A laser or other machining beam is controlled by a separate tracking beam utilizing a mid-objective scanning system. The firing frequency of the machining beam is determined by the position of the tracking beam on a detector, as compared to the scan line data. Accuracy is verified by detection of plume or spectra generated during machining. Alignment of the machining and tracking beams is by interferometric methods. The system improves optical performance parameters of telecentricity, angle of scanned beam line, location of line in which the scanned line resides, astigmatism and field curvature.

    摘要翻译： 将期望的电子结构设计转换为图形设计格式，并将其分类为与扫描线对应的伪光栅格式。 利用中间物镜扫描系统，通过单独的跟踪光束来控制激光或其它加工光束。 与扫描线数据相比，加工光束的点火频率由跟踪光束在检测器上的位置确定。 通过检测在加工过程中产生的羽流或光谱来验证精度。 加工和跟踪梁的对准是通过干涉测量方法。 该系统提高了远心性的光学性能参数，扫描光束线的角度，扫描线所在的线的位置，散光和场曲率。