公开(公告)号：US09114464B1

公开(公告)日：2015-08-25

申请号：US13420414

申请日：2012-03-14

申请人： David Ishikawa ,  Laila Mattos

发明人： David Ishikawa ,  Laila Mattos

IPC分类号： B26F1/02 ,  B21D22/00 ,  H05K13/02 ,  B23D23/00 ,  B26D7/32

CPC分类号： B23D23/00 ,  B26D1/095 ,  B26D7/26 ,  B26D7/32 ,  B26D2007/2607

摘要： A fixture for cutting thin substrates, such as films, wafers, semiconductor layers and the like, using a blade holder assembly joined to a substrate clamp assembly. Each assembly has a plurality of members with the substrate clamp having a base plate that introduces a vacuum environment and a substrate support plate that uses the vacuum to secure the substrate in place. The blade holder assembly has interlocking projections in interleaving sheet members sandwiched between two bracket members that define slots for supporting a knife. Multiple slots allow the blade to be positioned in different positions and different orientations for cutting thin substrates held with vacuum pressure in the substrate clamp assembly.

摘要翻译： 一种用于切割诸如薄膜，晶片，半导体层等的薄基板的固定装置，其使用连接到基板夹具组件的刀片保持器组件。 每个组件具有多个构件，其中衬底夹具具有引入真空环境的基板和使用真空的衬底支撑板，以将衬底固定就位。 刀片保持器组件具有互锁的突出部，该互锁突起插入夹在两个支架部件之间的片材部件，这两个支架部件限定用于支撑刀具的槽。 多个插槽允许刀片定位在不同的位置和不同的取向，用于切割在衬底夹具组件中以真空压力保持的薄衬底。

公开(公告)号：US08399281B1

公开(公告)日：2013-03-19

申请号：US13222617

申请日：2011-08-31

申请人： Daniel G. Patterson ,  Laila Mattos

发明人： Daniel G. Patterson ,  Laila Mattos

IPC分类号： H01L21/78

CPC分类号： H01L21/78 ,  B23K26/032 ,  B23K26/042 ,  B23K26/364 ,  B23K26/40 ,  B23K2103/172 ,  H01L31/1876 ,  Y02E10/50 ,  Y02P70/521

摘要： A method and system for dicing semiconductor devices from a semiconductor film. A semiconductor film, backed by a metal layer, is bonded by an adhesive layer to a flexible translucent substrate. Reference features on the film are used to describe a cutting path like a scribe line. An infrared laser beam is aligned to the scribe lines from the back surface of the flexible substrate. The infrared laser beam cuts through the flexible substrate and the majority of the thickness of the adhesive layer, cutting a first trough of a backside street along a scribe line defined by the reference features. An ultraviolet laser beam is aligned to the backside street, or to the scribe line as mapped to the back surface of the flexible substrate. The ultraviolet laser cuts through the metal layer and the semiconductor film, cutting a second trough along the scribe line. The second trough extends from the bottom of and deepens the first trough, cutting through the semiconductor film.

摘要翻译： 一种用于从半导体膜切割半导体器件的方法和系统。 由金属层支撑的半导体膜通过粘合剂层粘合到柔性半透明基板上。 胶片上的参考特征用于描述像划线一样的切割路径。 红外激光束从柔性基板的背面对准划线。 红外激光束穿过柔性基板和粘合剂层的大部分厚度，沿着由参考特征限定的划线切割背面街道的第一槽。 紫外线激光束对准到背面的街道，或者对准划线到柔性基板的后表面。 紫外线激光切割金属层和半导体膜，沿切割线切割第二槽。 第二槽从底部延伸并加深第一槽，切割半导体膜。

公开(公告)号：US08728933B1

公开(公告)日：2014-05-20

申请号：US13223133

申请日：2011-08-31

申请人： Michael Andres ,  Laila Mattos ,  Daniel G. Patterson ,  Gang He

发明人： Michael Andres ,  Laila Mattos ,  Daniel G. Patterson ,  Gang He

IPC分类号： H01L21/4763

CPC分类号： H01L31/18 ,  H01L21/78

摘要： A method of kerf formation and treatment for solar cells and semiconductor films and a system therefor are described. A semiconductor film is backed by a first metal layer and topped by a second metal layer. A reference feature is defined on the film. An ultraviolet laser beam is aligned to the reference feature. A kerf is cut along the reference feature, using the ultraviolet laser beam. The beam cuts through the second metal layer, through the film and through the first metal layer. Cutting leaves debris deposited on walls of the kerf. The debris is cleaned off of the walls, using an acid-based solvent. In the case of solar cells, respective first terminals of the solar cells are electrically isolated by the cleaned kerf, and respective negative terminals of the solar cells are electrically isolated by the cleaned kerf.

摘要翻译： 对太阳能电池和半导体膜的切口形成和处理方法及其系统进行描述。 半导体膜由第一金属层支撑并且被第二金属层顶起。 电影中定义了参考功能。 紫外激光束与参考特征对齐。 使用紫外线激光束沿着参考特征切割切口。 光束穿过第二金属层，穿过膜并穿过第一金属层。 切割叶片残留在切口的墙壁上。 使用酸性溶剂将碎屑从墙壁上清除。 在太阳能电池的情况下，太阳能电池的各自的第一端子被清洁的切口电隔离，并且太阳能电池的各个负极通过清洁的切口电隔离。

公开(公告)号：US08728849B1

公开(公告)日：2014-05-20

申请号：US13222686

申请日：2011-08-31

申请人： Laila Mattos ,  Daniel G. Patterson

发明人： Laila Mattos ,  Daniel G. Patterson

IPC分类号： H01L21/78 ,  H01L21/302

CPC分类号： B23K26/142 ,  B23K26/40 ,  B23K2101/40 ,  B23K2103/50 ,  H01L31/0392 ,  H01L31/03926 ,  H01L31/18 ,  Y02E10/50

摘要： A method of laser cutting through dissimilar materials separated by a metal foil. A material stack includes a semiconductor layer or film, with a metal foil layer attached to the back surface. The metal foil layer is attached to an insulative support material layer. A laser parameter is selected and optimized for the material stack. A laser beam creates a kerf in the material stack down to the metal foil layer. The laser beam removes metal through the kerf primarily by gasification rather than melting. Kerf formation continues after optimization of the laser parameter for removal of material from the remaining layers. A debris field resulting from the laser cutting of the metal layer is reduced and/or a portion of the debris is removed in an assisted manner as the beam cuts. The materials are diced by cutting the kerf through all materials.

摘要翻译： 激光切割通过金属箔分离的不同材料的方法。 材料堆叠包括半导体层或膜，金属箔层附着到背面。 金属箔层附着在绝缘支撑材料层上。 为材料堆选择和优化激光参数。 激光束在材料堆叠中产生切割至金属箔层的切口。 激光束主要通过气化而不是熔化来去除切屑上的金属。 在优化用于从剩余层中去除材料的激光参数之后继续进行Kerf形成。 当光束切割时，由金属层的激光切割产生的碎片场减少和/或一部分碎屑被辅助地去除。 通过切割所有材料切割材料来切割材料。

公开(公告)号：US08361828B1

公开(公告)日：2013-01-29

申请号：US13222750

申请日：2011-08-31

申请人： Daniel G. Patterson ,  Laila Mattos ,  Gang He

发明人： Daniel G. Patterson ,  Laila Mattos ,  Gang He

IPC分类号： H01L21/78

CPC分类号： H01L21/78 ,  B23K26/032 ,  B23K26/0619 ,  B23K26/0624 ,  B23K26/082 ,  B23K26/0853 ,  B23K26/361 ,  B23K26/40 ,  B23K2101/40 ,  B23K2103/172 ,  B23K2103/42 ,  B23K2103/50 ,  B23K2103/52

摘要： A method and system for dicing semiconductor devices from semiconductor thin films. A semiconductor film, backed by a metal layer, is bonded by an adhesive layer to a flexible translucent substrate. Reference features define device boundaries. An ultraviolet laser beam is aligned to the reference features and cuts through the semiconductor film, the metal layer and partially into the adhesive layer, cutting a frontside street along a real or imaginary scribe line on the cutting path. An infrared laser beam is aligned to the trough of the frontside street from the back surface of the flexible substrate, or the scribe lines are mapped to the back surface of the flexible substrate. The infrared laser beam cuts through the flexible substrate and the majority of the thickness of the adhesive layer, cutting a backside street along the scribe line. The backside street overlaps or cuts through to the frontside street, thereby separating the semiconductor devices.

摘要翻译： 一种用于从半导体薄膜切割半导体器件的方法和系统。 由金属层支撑的半导体膜通过粘合剂层粘合到柔性半透明基板上。 参考功能定义设备边界。 将紫外线激光束对准参考特征并切割穿过半导体膜，金属层并部分地进入粘合剂层，沿着切割路径上的实际或虚拟划线切割前沿街道。 红外激光束从柔性基板的后表面与前面街道的槽对准，或者将划线映射到柔性基板的后表面。 红外激光束穿过柔性基板和粘合剂层的大部分厚度，沿着划线切割一条背面的街道。 背面街道重叠或切割到前方街道，从而分离半导体器件。