- Patent Title: Stress in trigate devices using complimentary gate fill materials
-
Application No.: US12144469Application Date: 2008-06-23
-
Publication No.: US08362566B2Publication Date: 2013-01-29
- Inventor: Titash Rakshit , Martin Giles , Ravi Pillarisetty , Jack T. Kavalieros
- Applicant: Titash Rakshit , Martin Giles , Ravi Pillarisetty , Jack T. Kavalieros
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely, Sokoloff, Taylor & Zafman LLP
- Main IPC: H01L21/70
- IPC: H01L21/70
Abstract:
Embodiments relate to an improved tri-gate device having gate metal fills, providing compressive or tensile stress upon at least a portion of the tri-gate transistor, thereby increasing the carrier mobility and operating frequency. Embodiments also contemplate method for use of the improved tri-gate device.
Public/Granted literature
- US20090315114A1 STRESS IN TRIGATE DEVICES USING COMPLIMENTARY GATE FILL MATERIALS Public/Granted day:2009-12-24
Information query
IPC分类:
