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发明授权
US08362621B2 Microelectronic devices including multiple through-silicon via structures on a conductive pad and methods of fabricating the same 有权
包括导电焊盘上的多个通硅结构的微电子器件及其制造方法

Microelectronic devices including multiple through-silicon via structures on a conductive pad and methods of fabricating the same
摘要：
A microelectronic structure includes a conductive pad on a substrate. The conductive pad includes first and second openings extending therethrough. A first conductive via on the conductive pad extends through the first opening in the conductive pad into the substrate. A second conductive via on the conductive pad adjacent the first conductive via extends through the second opening in the conductive pad into the substrate. At least one of the conductive vias may be electrically isolated from the conductive pad. Related devices and fabrication methods are also discussed.
摘要（中）：

微电子结构包括在衬底上的导电焊盘。 导电垫包括延伸穿过其中的第一和第二开口。 导电焊盘上的第一导电通孔延伸穿过导电焊盘中的第一开口进入衬底。 邻近第一导电通孔的导电焊盘上的第二导电通孔延伸穿过导电焊盘中的第二开口进入衬底。 导电通孔中的至少一个可以与导电焊盘电绝缘。 还讨论了相关设备和制造方法。

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