Invention Grant
- Patent Title: Microelectronic devices including multiple through-silicon via structures on a conductive pad and methods of fabricating the same
- Patent Title (中): 包括导电焊盘上的多个通硅结构的微电子器件及其制造方法
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Application No.: US12393109Application Date: 2009-02-26
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Publication No.: US08362621B2Publication Date: 2013-01-29
- Inventor: Ho Jin Lee , Dong Hyeon Jang , Nam Seog Kim , In Young Lee , Ha Young Yim
- Applicant: Ho Jin Lee , Dong Hyeon Jang , Nam Seog Kim , In Young Lee , Ha Young Yim
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Myers Bigel Sibley & Sajovec, P.A.
- Priority: KR10-2008-0101129 20081015
- Main IPC: H01L23/522
- IPC: H01L23/522 ; H01L25/11
Abstract:
A microelectronic structure includes a conductive pad on a substrate. The conductive pad includes first and second openings extending therethrough. A first conductive via on the conductive pad extends through the first opening in the conductive pad into the substrate. A second conductive via on the conductive pad adjacent the first conductive via extends through the second opening in the conductive pad into the substrate. At least one of the conductive vias may be electrically isolated from the conductive pad. Related devices and fabrication methods are also discussed.
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