发明授权
- 专利标题： Substrate treatment method, coating film removing apparatus, and substrate treatment system
- 专利标题（中）： 基板处理方法，涂膜去除装置和基板处理系统
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申请号： US13161185申请日： 2011-06-15
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公开(公告)号： US08366872B2公开(公告)日： 2013-02-05
- 发明人: Kenji Tsutsumi , Junichi Kitano , Osamu Miyahara , Hideharu Kyouda
- 申请人： Kenji Tsutsumi , Junichi Kitano , Osamu Miyahara , Hideharu Kyouda
- 申请人地址： JP Tokyo
- 专利权人： Tokyo Electron Limited
- 当前专利权人： Tokyo Electron Limited
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JP2007-011262 20070122
- 主分类号： C23F1/02
- IPC分类号： C23F1/02
摘要：
According to the present invention, during the photolithography processing of a substrate, exposure processing is performed immediately after removal of a coating film on the rear surface of the substrate, and a coating film is formed on the rear surface of the substrate immediately after the exposure processing. Thereafter, etching treatment and so on are performed, and a series of these treatment and processing steps are performed a predetermined number of times. The coating film has been formed on the rear surface of the substrate at the time for the etching treatment, so that even if the coating film gets minute scratches, the rear surface of the substrate itself is protected by the coating film and thus never scratched. Further, since the coating film on the rear surface of the substrate is removed immediately before the exposure processing, the rear surface of the substrate can be flat for the exposure processing.
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