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    Substrate treatment method, coating film removing apparatus, and substrate treatment system
    1.
    发明授权
    Substrate treatment method, coating film removing apparatus, and substrate treatment system 有权
    基板处理方法，涂膜去除装置和基板处理系统

    公开(公告)号：US08366872B2

    公开(公告)日：2013-02-05

    申请号：US13161185

    申请日：2011-06-15

    Applicant: Kenji Tsutsumi ,  Junichi Kitano ,  Osamu Miyahara ,  Hideharu Kyouda

    Inventor： Kenji Tsutsumi ,  Junichi Kitano ,  Osamu Miyahara ,  Hideharu Kyouda

    IPC: C23F1/02

    CPC classification number: C23C26/00 ,  G03F1/80 ,  G03F7/707 ,  G03F7/70916 ,  H01L21/308 ,  H01L21/6708 ,  H01L21/6715 ,  H01L21/67178 ,  H01L21/67225 ,  H01L21/67742 ,  H01L21/67745 ,  H01L21/68707

    Abstract: According to the present invention, during the photolithography processing of a substrate, exposure processing is performed immediately after removal of a coating film on the rear surface of the substrate, and a coating film is formed on the rear surface of the substrate immediately after the exposure processing. Thereafter, etching treatment and so on are performed, and a series of these treatment and processing steps are performed a predetermined number of times. The coating film has been formed on the rear surface of the substrate at the time for the etching treatment, so that even if the coating film gets minute scratches, the rear surface of the substrate itself is protected by the coating film and thus never scratched. Further, since the coating film on the rear surface of the substrate is removed immediately before the exposure processing, the rear surface of the substrate can be flat for the exposure processing.

    Abstract translation: 根据本发明，在基板的光刻处理中，在除去基板背面的涂膜后立即进行曝光处理，在曝光后立即在基板的背面形成涂膜 处理。 此后，进行蚀刻处理等，并且进行一系列这些处理和处理步骤预定次数。 在蚀刻处理时，已经在基板的背面形成了涂膜，使得即使涂膜受到微小的划痕，基板本身的后表面也被涂膜保护，因此不会被刮伤。 此外，由于在曝光处理之前立即除去基板后表面上的涂膜，所以基板的后表面可以是平坦的，用于曝光处理。

    Ni-base heat resistant alloy
    2.
    发明授权
    Ni-base heat resistant alloy 有权
    镍基耐热合金

    公开(公告)号：US08293169B2

    公开(公告)日：2012-10-23

    申请号：US13070689

    申请日：2011-03-24

    Applicant: Hiroyuki Semba ,  Atsuro Iseda ,  Hiroyuki Hirata ,  Kaori Kawano ,  Masaaki Igarashi ,  Osamu Miyahara

    Inventor： Hiroyuki Semba ,  Atsuro Iseda ,  Hiroyuki Hirata ,  Kaori Kawano ,  Masaaki Igarashi ,  Osamu Miyahara

    IPC: C22C19/05

    CPC classification number: C22C19/055 ,  C22C19/056

    Abstract: A high strength, ductile, and tough Ni-base heat resistant alloy comprises by mass percent, C: 0.1% or less, Si: 1% or less, Mn: 1% or less, Cr: not less than 15% to less than 28%, Fe: 15% or less, W: more than 5% to not more than 20%, Al: more than 0.5% to not more than 2%, Ti: more than 0.5% to not more than 2%, Nd: 0.001 to 0.1% and B: 0.0005 to 0.01%, with the balance being Ni and impurities. Impurity contents of P, S, Sn, Pb, Sb, Zn and As are P: 0.03% or less, S: 0.01% or less, Sn: 0.020% or less, Pb: 0.010% or less, Sb: 0.005% or less, Zn: 0.005% or less and As: 0.005% or less, and formulas of [0.015≦Nd+13.4×B≦0.13], [Sn+Pb≦0.025] and [Sb+Zn +As≦0.010] are met.

    Abstract translation: 高强度，延性和韧性的Ni基耐热合金，以质量％计，C：0.1％以下，Si：1％以下，Mn：1％以下，Cr：15％以上，小于 28％，Fe：15％以下，W：5％以上20％以下，Al：0.5％以上2％以下，Ti：0.5％以上且2％以下，Nd ：0.001〜0.1％，B：0.0005〜0.01％，余量为Ni和杂质。 P，S，Sn，Pb，Sb，Zn和As的杂质含量P：0.03％以下，S：0.01％以下，Sn：0.020％以下，Pb：0.010％以下，Sb：0.005％ 较少，Zn：0.005％以下，As：0.005％以下，[0.015＆nlE; Nd + 13.4×B＆nlE; 0.13]，[Sn + Pb＆nlE; 0.025]和[Sb + Zn + As＆nlE; 0.025] 见面

    Developing method and developing apparatus
    3.
    发明授权
    Developing method and developing apparatus 有权
    开发方法和开发设备

    公开(公告)号：US08054443B2

    公开(公告)日：2011-11-08

    申请号：US12273165

    申请日：2008-11-18

    Applicant: Junichi Kitano ,  Osamu Miyahara ,  Shinya Wakamizu

    Inventor： Junichi Kitano ,  Osamu Miyahara ,  Shinya Wakamizu

    IPC: G03B27/32 ,  G03B27/54

    CPC classification number: G03F7/40

    Abstract: A developing method is used for subjecting a light-exposed resist film disposed on a wafer W to a developing process by a developing solution and a rinsing process by a rinsing liquid. In a state where the resist film on the wafer W is wet with the developing solution or rinsing liquid before a drying process is performed on the wafer W, a chemical liquid (curing chemical liquid), which contains a resist curing aid contributory to curing of a resist film remaining on the wafer W, is supplied onto a surface of the wafer W. Then, ultraviolet rays are radiated onto a surface of the wafer to cure a resist film remaining on the wafer W by a synergistic effect of the resist curing aid and the ultraviolet rays thus radiated, so as to prevent pattern fall.

    Abstract translation: 使用显影方法对设置在晶片W上的曝光抗蚀剂膜进行显影液的显影处理和通过漂洗液的漂洗处理。 在对晶片W进行干燥处理之前，晶片W上的抗蚀剂膜与显影液或漂洗液体湿润的状态下，含有抗蚀剂固化助剂的化学液（固化化学液） 保留在晶片W上的抗蚀剂膜被提供到晶片W的表面上。然后，通过抗蚀剂固化助剂的协同效应将紫外线辐射到晶片的表面上以固化残留在晶片W上的抗蚀剂膜 并且因此辐射紫外线，以防止图案下降。

    Ni-BASE HEAT RESISTANT ALLOY
    4.
    发明申请
    Ni-BASE HEAT RESISTANT ALLOY 有权
    镍基耐热合金

    公开(公告)号：US20110223055A1

    公开(公告)日：2011-09-15

    申请号：US13070689

    申请日：2011-03-24

    Applicant: Hiroyuki SEMBA ,  Atsuro ISEDA ,  Hiroyuki HIRATA ,  Kaori KAWANO ,  Masaaki IGARASHI ,  Osamu MIYAHARA

    Inventor： Hiroyuki SEMBA ,  Atsuro ISEDA ,  Hiroyuki HIRATA ,  Kaori KAWANO ,  Masaaki IGARASHI ,  Osamu MIYAHARA

    IPC: C22C19/05

    CPC classification number: C22C19/055 ,  C22C19/056

    Abstract: A Ni-base heat resistant alloy, which comprises by mass percent, C: 0.1% or less, Si: 1% or less, Mn: 1% or less, Cr: not less than 15% to less than 28%, Fe: 15% or less, W: more than 5% to not more than 20%, Al: more than 0.5% to not more than 2%, Ti: more than 0.5% to not more than 2%, Nd: 0.001 to 0.1% and B: 0.0005 to 0.01%, with the balance being Ni and impurities, in which the contents of P, S, Sn, Pb, Sb, Zn and As among the impurities are P: 0.03% or less, S: 0.01% or less, Sn: 0.020% or less, Pb: 0.010% or less, Sb: 0.005% or less, Zn: 0.005% or less and As: 0.005% or less, and further satisfies the formulas of [0.015≦Nd+13.4×B≦0.13], [Sn+Pb≦0.025] and [Sb+Zn+As≦0.010] is an alloy in which much higher strength than the conventional Ni-base heat resistant alloy can be achieved, the ductility and toughness after a long period of use at a high temperature are remarkably improved, and moreover the zero ductility temperature and the hot workability are also further improved. This alloy can be suitably used as a pipe material, a thick plate material for a heat resistant pressure member, a bar material, a forging, and the like for a boiler for power generation, a plant for chemical industry, and the like. This alloy may contain a specific amount of one or more elements selected from Mo, Co, Nb, V, Zr, Hf, Mg, Ca, La, Ce, Ta and Re.

    Abstract translation: Ni基耐热合金，以质量％计含有C：0.1％以下，Si：1％以下，Mn：1％以下，Cr：15％以上且小于28％，Fe： 15％以下，W：5％以上20％以下，Al：0.5％以上2％以下，Ti：超过0.5％以上2％以下，Nd：0.001〜0.1％ B：0.0005〜0.01％，余量为杂质，其中P，S，Sn，Pb，Sb，Zn和As的含量为P：0.03％以下，S：0.01％以下 较少，Sn：0.020％以下，Pb：0.010％以下，Sb：0.005％以下，Zn：0.005％以下，As：0.005％以下，进一步满足[0.015＆nlE; Nd + 13.4 ×B＆nlE; 0.13]，[Sn + Pb＆nlE; 0.025]和[Sb + Zn + As＆nlE; 0.010]是一种合金，其中可以获得比常规的Ni基耐热合金高得多的强度， 在高温下长时间使用显着提高，而且零延展性温度和热加工性也进一步提高 改进。 该合金可以适合用作管材，用于发电锅炉的耐热压力构件的厚板材料，棒材，锻造等，用于化学工业的植物等。 该合金可以含有一定量的选自Mo，Co，Nb，V，Zr，Hf，Mg，Ca，La，Ce，Ta和Re中的一种或多种元素。

    Rinse treatment method and development process method
    5.
    发明授权
    Rinse treatment method and development process method 有权
    冲洗处理方法和开发工艺方法

    公开(公告)号：US07968278B2

    公开(公告)日：2011-06-28

    申请号：US11578055

    申请日：2005-03-02

    Applicant: Yasuhiro Takaki ,  Osamu Miyahara ,  Keiichi Tanaka ,  Shinya Wakamizu ,  Takashi Terada

    Inventor： Yasuhiro Takaki ,  Osamu Miyahara ,  Keiichi Tanaka ,  Shinya Wakamizu ,  Takashi Terada

    IPC: G03F7/26 ,  G03F7/30

    CPC classification number: H01L21/67051 ,  G03F7/3021

    Abstract: A rinsing method for performing a rinsing process on a substrate, after a developing process is performed on a light-exposed pattern disposed thereon, includes a step (STEP 5) of throwing off a developing solution from the substrate after development; a step (STEP 6) of supplying a water-based cleaning liquid onto the substrate; a step (STEP 7) of supplying a surfactant-containing rinsing liquid onto the substrate to replace liquid remaining on the substrate with the surfactant-containing rinsing liquid; and a step (STEP 8) of rotating the substrate to expand and throw off the surfactant-containing rinsing liquid on the substrate. STEP 8 is arranged to supply the surfactant-containing rinsing liquid for a supply time of 5 seconds or less. STEP 9 is arranged to include a first period with a lower rotation number and a second period with a higher rotation number, and to set the rotation number of the substrate in the first period to be more than 300 rpm and less than 1,000 rpm.

    Abstract translation: 在对其上设置的曝光图案进行显影处理之后，在基板上进行漂洗处理的漂洗方法包括在显影后从显影基板抛出显影液的工序（步骤5） 向基板供给水性清洗液的工序（工序6） 将含表面活性剂的冲洗液供给到基板上以用含表面活性剂的冲洗液取代残留在基板上的液体的步骤（STEP7） 以及使基板旋转以使基板上含表面活性剂的冲洗液体膨胀和脱落的工序（步骤8）。 步骤8被布置成供给含有表面活性剂的冲洗液，供给时间为5秒以下。 步骤9被布置成包括具有较低转数的第一周期和具有较高转数的第二周期，并且将第一周期中的基板的转数设定为大于300rpm且小于1,000rpm。

    Method for etching doughnut-type glass substrates
    8.
    发明申请
    Method for etching doughnut-type glass substrates 失效

    公开(公告)号：US20060118521A1

    公开(公告)日：2006-06-08

    申请号：US11274303

    申请日：2005-11-16

    Applicant: Osamu Miyahara ,  Masami Kaneko

    Inventor： Osamu Miyahara ,  Masami Kaneko

    IPC: B44C1/22

    CPC classification number: H01L21/67063

    Abstract: A method for etching doughnut-type glass substrates, which comprises laminating a plurality of doughnut-type glass substrates each having a circular hole at its center so that the circular holes form a cylindrical hole, and applying an etching treatment to inner peripheral edge surfaces of the plurality of the laminated doughnut-type glass substrates all at once by means of an etching liquid or an etching gas, wherein the etching liquid or the etching gas is supplied from one end of the cylindrical hole, made to flow in the cylindrical hole, and discharged from the other end of the cylindrical hole so that it is not in contact with exposed main surfaces of the doughnut-type glass substrates at both ends of the laminate consisting of the doughnut-type glass substrates.

    SUBSTRATE PROCESSING METHOD, SUBSTRATE PROCESSING SYSTEM, AND COMPUTER-READABLE STORAGE MEDIUM
    9.
    发明申请
    SUBSTRATE PROCESSING METHOD, SUBSTRATE PROCESSING SYSTEM, AND COMPUTER-READABLE STORAGE MEDIUM 审中-公开
    基板处理方法，基板处理系统和计算机可读存储介质

    公开(公告)号：US20120061021A1

    公开(公告)日：2012-03-15

    申请号：US13299457

    申请日：2011-11-18

    Applicant: Hideharu Kyouda ,  Junichi Kitano ,  Osamu Miyahara ,  Kenji Tsutsumi

    Inventor： Hideharu Kyouda ,  Junichi Kitano ,  Osamu Miyahara ,  Kenji Tsutsumi

    IPC: C23F1/08

    CPC classification number: H01L21/31144 ,  H01L21/67207

    Abstract: In the present invention, a plurality of rounds of patterning are performed on a substrate. In a patterning system, the substrate on which a first round of patterning has been performed is transferred to a planarizing film forming unit, where a planarizing film is formed above the substrate. The substrate is then transferred to the patterning system and subjected to a second round of patterning. The time from the completion of the forming processing of the planarizing film to the start of the second round of patterning is managed to be constant among the substrates. According to the present invention, in the pattern forming processing of performing a plurality of rounds of patterning, a pattern with a desired dimension can be stably formed above the substrate.

    Abstract translation: 在本发明中，在基板上进行多次图案化。 在图案形成系统中，已经进行了第一轮图案化的基板被转印到平坦化膜形成单元，其中在基板上形成平坦化膜。 然后将衬底转移到图案化系统并进行第二轮图案化。 从平面化膜的成形处理完成到第二轮图案化开始的时间被控制为在基板之间是恒定的。 根据本发明，在进行多次图案化的图案形成处理中，可以稳定地在基板上方形成具有期望尺寸的图案。

    SUBSTRATE TREATMENT METHOD, COATING FILM REMOVING APPARATUS, AND SUBSTRATE TREATMENT SYSTEM
    10.
    发明申请
    SUBSTRATE TREATMENT METHOD, COATING FILM REMOVING APPARATUS, AND SUBSTRATE TREATMENT SYSTEM 有权
    基板处理方法，涂膜去除装置和基板处理系统

    公开(公告)号：US20110240597A1

    公开(公告)日：2011-10-06

    申请号：US13161185

    申请日：2011-06-15

    Applicant: Kenji TSUTSUMI ,  Junichi Kitano ,  Osamu Miyahara ,  Hideharu Kyouda

    Inventor： Kenji TSUTSUMI ,  Junichi Kitano ,  Osamu Miyahara ,  Hideharu Kyouda

    IPC: C23F1/02

    CPC classification number: C23C26/00 ,  G03F1/80 ,  G03F7/707 ,  G03F7/70916 ,  H01L21/308 ,  H01L21/6708 ,  H01L21/6715 ,  H01L21/67178 ,  H01L21/67225 ,  H01L21/67742 ,  H01L21/67745 ,  H01L21/68707

    Abstract: According to the present invention, during the photolithography processing of a substrate, exposure processing is performed immediately after removal of a coating film on the rear surface of the substrate, and a coating film is formed on the rear surface of the substrate immediately after the exposure processing. Thereafter, etching treatment and so on are performed, and a series of these treatment and processing steps are performed a predetermined number of times. The coating film has been formed on the rear surface of the substrate at the time for the etching treatment, so that even if the coating film gets minute scratches, the rear surface of the substrate itself is protected by the coating film and thus never scratched. Further, since the coating film on the rear surface of the substrate is removed immediately before the exposure processing, the rear surface of the substrate can be flat for the exposure processing.

    Abstract translation: 根据本发明，在基板的光刻处理中，在除去基板背面的涂膜后立即进行曝光处理，在曝光后立即在基板的背面形成涂膜 处理。 此后，进行蚀刻处理等，并且进行一系列这些处理和处理步骤预定次数。 在蚀刻处理时，已经在基板的背面形成了涂膜，使得即使涂膜受到微小的划痕，基板本身的后表面也被涂膜保护，因此不会被刮伤。 此外，由于在曝光处理之前立即除去基板后表面上的涂膜，所以基板的后表面可以是平坦的，用于曝光处理。

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