发明授权
- 专利标题： Radiation source, lithographic apparatus, and device manufacturing method
- 专利标题（中）： 辐射源，光刻设备和器件制造方法
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申请号： US12712545申请日： 2010-02-25
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公开(公告)号： US08368032B2公开(公告)日： 2013-02-05
- 发明人: Dzmitry Labetski , Erik Roelof Loopstra , Gerardus Hubertus Petrus Maria Swinkels , Tom Van Zutphen
- 申请人： Dzmitry Labetski , Erik Roelof Loopstra , Gerardus Hubertus Petrus Maria Swinkels , Tom Van Zutphen
- 申请人地址： NL Veldhoven
- 专利权人： ASML Netherlands B.V.
- 当前专利权人： ASML Netherlands B.V.
- 当前专利权人地址： NL Veldhoven
- 代理机构： Pillsbury Winthrop Shaw Pittman LLP
- 主分类号： H05H1/42
- IPC分类号： H05H1/42 ; H05H1/00 ; H01J61/28 ; H01J37/08
摘要：
A plasma radiation source includes a vessel configured to catch a source material transmitted along a trajectory, and a decelerator configured to reduce a speed of the source material in a section of the trajectory downstream of a plasma initiation site.
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