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US08368135B2 Field effect transistor with narrow bandgap source and drain regions and method of fabrication 有权

Field effect transistor with narrow bandgap source and drain regions and method of fabrication
摘要：
A transistor having a narrow bandgap semiconductor source/drain region is described. The transistor includes a gate electrode formed on a gate dielectric layer formed on a silicon layer. A pair of source/drain regions are formed on opposite sides of the gate electrode wherein said pair of source/drain regions comprise a narrow bandgap semiconductor film formed in the silicon layer on opposite sides of the gate electrode.
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