Invention Grant
- Patent Title: Chip structure and process for forming the same
- Patent Title (中): 芯片结构及其形成方法
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Application No.: US13277142Application Date: 2011-10-19
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Publication No.: US08368204B2Publication Date: 2013-02-05
- Inventor: Mou-Shiung Lin , Jin-Yuan Lee , Ching-Cheng Huang
- Applicant: Mou-Shiung Lin , Jin-Yuan Lee , Ching-Cheng Huang
- Applicant Address: TW Hsinchu
- Assignee: Megica Corporation
- Current Assignee: Megica Corporation
- Current Assignee Address: TW Hsinchu
- Agency: McDermott Will & Emery LLP
- Priority: TW90130876A 20011213; TW90131030A 20011214; TW90131796A 20011221
- Main IPC: H01L23/12
- IPC: H01L23/12 ; H01L23/053 ; H01L23/48 ; H01L23/52 ; H01L29/40

Abstract:
A chip with a metallization structure and an insulating layer with first and second openings over first and second contact points of the metallization structure, a first circuit layer connecting the first and second contact points and comprising a first trace portion, first and second via portions between the first trace portion and the first and second contact points, the first circuit layer comprising a copper layer and a first conductive layer under the copper layer and at a sidewall of the first trace portion, and a second circuit layer comprising a second trace portion with a third via portion at a bottom thereof, wherein the second circuit layer comprises another copper layer and a second conductive layer under the other copper layer and at a sidewall of the second trace portion, and a second dielectric layer comprising a portion between the first and second circuit layers.
Public/Granted literature
- US20120098128A1 CHIP STRUCTURE AND PROCESS FOR FORMING THE SAME Public/Granted day:2012-04-26
Information query
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