A method of removing a hard mask during fabrication of semiconductor devices is provided. A protective layer, such as a bottom anti-reflective coating (BARC) layer or other dielectric layer, is formed over structures formed on a substrate, wherein spacers are formed alongside the structures. In an embodiment, the structures are gate electrodes having a hard mask formed thereon and the spacers are spacers formed alongside the gate electrodes. A photoresist layer is formed over the protective layer, and the photoresist layer may be patterned to remove a portion of the photoresist layer over portions of the protective layer. Thereafter, an etch-back process is performed, such that the protective layer adjacent to the spacers remains to substantially protect the spacers. The hard mask is then removed while the protective layer protects the spacers.