Invention Grant
- Patent Title: Photodetectors
- Patent Title (中): 光电探测器
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Application No.: US12472168Application Date: 2009-05-26
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Publication No.: US08373153B2Publication Date: 2013-02-12
- Inventor: Doyeol Ahn
- Applicant: Doyeol Ahn
- Applicant Address: KR Seoul
- Assignee: University of Seoul Industry Cooperation Foundation
- Current Assignee: University of Seoul Industry Cooperation Foundation
- Current Assignee Address: KR Seoul
- Agency: Workman Nydegger
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L21/36
Abstract:
Implementations of quantum well photodetectors are provided. In one embodiment, a quantum structure includes a first barrier layer, a well layer located on the first barrier layer, and a second barrier layer located on the well layer. A metal layer is located adjacent to the quantum structure.
Public/Granted literature
- US20100301308A1 PHOTODETECTORS Public/Granted day:2010-12-02
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