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    Photodiodes with surface plasmon couplers
    2.
    发明授权
    Photodiodes with surface plasmon couplers 有权
    光电二极管与表面等离子体耦合器

    公开(公告)号：US08247881B2

    公开(公告)日：2012-08-21

    申请号：US12430447

    申请日：2009-04-27

    Applicant: Doyeol Ahn

    Inventor： Doyeol Ahn

    IPC: H01L31/18 ,  H01L31/0224 ,  H01L21/02

    CPC classification number: H01L31/105 ,  B82Y20/00 ,  H01L31/02165 ,  H01L31/0224

    Abstract: A device that includes a signal generating unit having a surface that can receive photons, a first metal structure located on the surface of the signal generating unit, and a second metal structure located on the surface of the signal generating unit. The second metal structure being spaced apart from the first metal structure.

    Abstract translation: 一种装置，包括具有能够接收光子的表面的信号发生单元，位于信号产生单元的表面上的第一金属结构以及位于信号发生单元的表面上的第二金属结构。 第二金属结构与第一金属结构间隔开。

    Polariton mode optical switch
    3.
    发明授权
    Polariton mode optical switch 有权
    偏振模式光开关

    公开(公告)号：US08063396B2

    公开(公告)日：2011-11-22

    申请号：US12432967

    申请日：2009-04-30

    Applicant: Doyeol Ahn

    Inventor： Doyeol Ahn

    IPC: H01L29/06

    CPC classification number: G02F1/01716 ,  B82Y20/00 ,  G02F2202/32 ,  G02F2203/10 ,  Y10S977/755

    Abstract: Devices, methods, and techniques for frequency-dependent optical switching are provided. In one embodiment, a device includes a substrate, a first and a second optical-field confining structures located on the substrate, and a quantum structure disposed between the first and the second optical-field confining structures. The first optical-field confining structure may include a surface to receive photons. The second optical-field confining structure may be spaced apart from the first optical-field confining structure. The first and the second optical-field confining structures may be configured to substantially confine therebetween an optical field of the photons.

    Abstract translation: 提供了用于频率相关光切换的设备，方法和技术。 在一个实施例中，器件包括衬底，位于衬底上的第一和第二光场限制结构以及设置在第一和第二光场约束结构之间的量子结构。 第一光场约束结构可以包括接收光子的表面。 第二光场约束结构可以与第一光场约束结构间隔开。 第一和第二光场约束结构可以被配置为基本上限制光子的光场。

    Compound semiconductors
    4.
    发明授权
    Compound semiconductors 有权
    化合物半导体

    公开(公告)号：US08748862B2

    公开(公告)日：2014-06-10

    申请号：US12498265

    申请日：2009-07-06

    Applicant: Doyeol Ahn

    Inventor： Doyeol Ahn

    IPC: H01L29/06

    CPC classification number: H01L33/28 ,  H01L33/025 ,  H01L33/06 ,  H01L33/12 ,  H01L33/14 ,  H01L33/285

    Abstract: Compound semiconductors capable of emitting light in the green spectrum are provided. The compound semiconductors may display improved quantum efficiencies when applied to various optical devices. Also, light emitting diodes and light emitting diode modules comprising the compound semiconductors are provided.

    Abstract translation: 提供能够在绿色光谱中发光的化合物半导体。 当应用于各种光学器件时，化合物半导体可以显示出提高的量子效率。 此外，提供了包含化合物半导体的发光二极管和发光二极管模块。

    Quantum Karnaugh map
    5.
    发明授权
    Quantum Karnaugh map 有权
    量子卡诺图

    公开(公告)号：US08671369B2

    公开(公告)日：2014-03-11

    申请号：US12633575

    申请日：2009-12-08

    Applicant: Doyeol Ahn

    Inventor： Doyeol Ahn

    IPC: G06F17/50 ,  H01L25/00 ,  H03K19/02

    CPC classification number: G06F17/5022 ,  B82Y10/00 ,  G06N99/002

    Abstract: Techniques for determining and a computing device configured to determine a quantum Karnaugh map through decomposing a quantum circuit into a multiple number of sub-circuits are provided. Also, techniques for obtaining and a computing device configured to obtain a quantum circuit which includes the minimum number of gates among possible quantum circuits corresponding to a quantum Karnaugh map are also provided.

    Abstract translation: 提供了用于确定的技术和被配置为通过将量子电路分解成多个子电路来确定量子卡诺图的计算装置。 此外，还提供了用于获得和计算装置的技术，其被配置为获得包括对应于量子卡诺图的可能量子电路中的最小数量的栅极的量子电路。

    Magnetic resonance compatible magnetic field detection, based on diffuse reflectance of nano-magnet sets
    6.
    发明授权
    Magnetic resonance compatible magnetic field detection, based on diffuse reflectance of nano-magnet sets 有权
    磁共振兼容磁场检测，基于纳米磁体集的漫反射

    公开(公告)号：US08289022B2

    公开(公告)日：2012-10-16

    申请号：US12696652

    申请日：2010-01-29

    Applicant: Doyeol Ahn

    Inventor： Doyeol Ahn

    IPC: G01V3/00

    CPC classification number: G01R33/3415 ,  G01R33/302

    Abstract: A device to detect a magnetic field is disclosed. The device includes a first set of nano-magnets and a second set of nano-magnets. The first set of nano-magnets may be operable to transmit a radio frequency (RF) signal to a target, and a second set of nano-magnets may be operable to induce an electrical signal in response to a magnetic resonance signal generated from the target.

    Abstract translation: 公开了一种用于检测磁场的装置。 该装置包括第一组纳米磁体和第二组纳米磁体。 第一组纳米磁体可以用于将射频（RF）信号传输到目标，并且第二组纳米磁体可以用于响应于从目标产生的磁共振信号而感应电信号 。

    Semiconductor device having strong excitonic binding
    7.
    发明授权
    Semiconductor device having strong excitonic binding 失效
    具有强激子结合的半导体器件

    公开(公告)号：US08253145B2

    公开(公告)日：2012-08-28

    申请号：US12431930

    申请日：2009-04-29

    Applicant: Doyeol Ahn

    Inventor： Doyeol Ahn

    IPC: H01L29/15 ,  H01L31/0256

    CPC classification number: H01L21/02521 ,  H01L21/0237

    Abstract: Semiconductor devices having strong excitonic binding are disclosed. In some embodiments, a semiconductor device includes at least one active layer composed of a first compound, and at least one barrier layer composed of a second compound and disposed on at least one surface of the at least one active layer. An energy band gap of the at least one barrier layer is wider than energy band gap of the at least one active layer, and the first and/or second compounds are selected to strengthen an excitonic binding between an electron and a hole in the at least one active layer.

    Abstract translation: 公开了具有强激子结合的半导体器件。 在一些实施例中，半导体器件包括由第一化合物组成的至少一个活性层和由第二化合物构成的至少一个阻挡层，并设置在至少一个活性层的至少一个表面上。 所述至少一个阻挡层的能带隙比所述至少一个有源层的能带隙宽，并且所述第一和/或第二化合物被选择为增强所述至少一个势垒层中的电子和空穴之间的激子结合 一个活动层。

    SEMICONDUCTOR DEVICE
    9.
    发明申请
    SEMICONDUCTOR DEVICE 审中-公开
    半导体器件

    公开(公告)号：US20100270547A1

    公开(公告)日：2010-10-28

    申请号：US12430424

    申请日：2009-04-27

    Applicant: Doyeol Ahn

    Inventor： Doyeol Ahn

    IPC: H01L29/26 ,  H01L29/12 ,  H01L21/20

    CPC classification number: H01L31/0296 ,  B82Y20/00 ,  H01L21/02403 ,  H01L21/02414 ,  H01L21/02472 ,  H01L21/02483 ,  H01L21/02554 ,  H01L21/02565 ,  H01L31/0322 ,  H01L31/035236 ,  Y02E10/541

    Abstract: Semiconductor devices having at least one barrier layer with a wide energy band gap are disclosed. In some embodiments, a semiconductor device includes at least one active layer composed of a first compound, and at least one barrier layer composed of a second compound and disposed on at least one surface of the at least one active layer. The at least one barrier layer may have a wider energy band gap than an energy band gap of the at least one active layer. The compositions of the first and second compounds may be controlled to adjust the difference between Fermi functions for conduction band and valence band in the at least one active layer.

    Abstract translation: 公开了具有至少一个具有宽能带隙的阻挡层的半导体器件。 在一些实施例中，半导体器件包括由第一化合物组成的至少一个活性层和由第二化合物构成的至少一个阻挡层，并设置在至少一个活性层的至少一个表面上。 所述至少一个阻挡层可以具有比所述至少一个有源层的能带隙更宽的能带隙。 可以控制第一和第二化合物的组成以调节至少一个活性层中的导带和价带之间的费米函数之间的差异。

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