发明授权
- 专利标题: Nanocluster charge storage device
- 专利标题(中): 纳米簇电荷存储装置
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申请号: US11964309申请日: 2007-12-26
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公开(公告)号: US08373221B2公开(公告)日: 2013-02-12
- 发明人: Robert F. Steimle , Ramachandran Muralidhar , Bruce E. White
- 申请人: Robert F. Steimle , Ramachandran Muralidhar , Bruce E. White
- 申请人地址: US TX Austin
- 专利权人: Freescale Semiconductor, Inc.
- 当前专利权人: Freescale Semiconductor, Inc.
- 当前专利权人地址: US TX Austin
- 主分类号: H01L29/792
- IPC分类号: H01L29/792
摘要:
An integrated circuit and method of forming an integrated circuit having a memory portion minimizes an amount of oxidation of nanocluster storage elements in the memory portion. A first region of the integrated circuit has non-memory devices, each having a control electrode or gate formed of a single conductive layer of material. A second region of the integrated circuit has a plurality of memory cells, each having a control electrode of at least two conductive layers of material that are positioned one overlying another. The at least two conductive layers are at substantially a same electrical potential when operational and form a single gate electrode. In one form each memory cell gate has two polysilicon layers overlying a nanocluster storage layer.
公开/授权文献
- US20080105945A1 METHOD OF FORMING A NANOCLUSTER CHARGE STORAGE DEVICE 公开/授权日:2008-05-08