发明授权
- 专利标题: Three dimensional multilayer circuit
- 专利标题(中): 三维多层电路
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申请号: US13256233申请日: 2009-04-06
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公开(公告)号: US08373440B2公开(公告)日: 2013-02-12
- 发明人: Dmitri Borisovich Strukov , R. Stanley Williams
- 申请人: Dmitri Borisovich Strukov , R. Stanley Williams
- 申请人地址: US TX Houston
- 专利权人: Hewlett-Packard Development Company, L.P.
- 当前专利权人: Hewlett-Packard Development Company, L.P.
- 当前专利权人地址: US TX Houston
- 国际申请: PCT/US2009/039666 WO 20090406
- 国际公布: WO2010/117355 WO 20101014
- 主分类号: H03K19/173
- IPC分类号: H03K19/173
摘要:
A three dimensional multilayer circuit includes a via array made up of a set of first vias and a set of second vias and an area distributed CMOS layer configured to selectively address said first vias and said second vias. At least two crossbar arrays overlay the area distributed CMOS layer. These crossbar arrays include a plurality of intersecting crossbar segments and programmable crosspoint devices which are interposed between the intersecting crossbar segments. The vias are connected to the crossbar segments such that each programmable crosspoint devices can be uniquely accessed using a first via and a second via.
公开/授权文献
- US20120001654A1 Three Dimensional Multilayer Circuit 公开/授权日:2012-01-05
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