发明授权
US08377761B2 SOI device having a substrate diode with process tolerant configuration and method of forming the SOI device
有权
SOI器件具有具有工艺容限配置的衬底二极管和形成SOI器件的方法
- 专利标题： SOI device having a substrate diode with process tolerant configuration and method of forming the SOI device
- 专利标题（中）： SOI器件具有具有工艺容限配置的衬底二极管和形成SOI器件的方法
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申请号： US13081575申请日： 2011-04-07
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公开(公告)号： US08377761B2公开(公告)日： 2013-02-19
- 发明人: Andreas Gehring , Jan Hoentschel , Andy Wei
- 申请人： Andreas Gehring , Jan Hoentschel , Andy Wei
- 申请人地址： US TX Austin
- 专利权人： Advanced Micro Devices, Inc.
- 当前专利权人： Advanced Micro Devices, Inc.
- 当前专利权人地址： US TX Austin
- 代理机构： Williams, Morgan & Amerson, P.C.
- 优先权： DE102007004859 20070131
- 主分类号： H01L21/84
- IPC分类号： H01L21/84
摘要：
A substrate diode for an SOI device is formed in accordance with an appropriately designed manufacturing flow, wherein transistor performance enhancing mechanisms may be implemented substantially without affecting the diode characteristics. In one aspect, respective openings for the substrate diode may be formed after the formation of a corresponding sidewall spacer structure used for defining the drain and source regions, thereby obtaining a significant lateral distribution of the dopants in the diode areas, which may therefore provide sufficient process margins during a subsequent silicidation sequence on the basis of a removal of the spacers in the transistor devices. In a further aspect, in addition to or alternatively, an offset spacer may be formed substantially without affecting the configuration of respective transistor devices.
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