发明授权
- 专利标题: Donor substrate and method of manufacturing display
- 专利标题(中): 供体基板和制造方法显示
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申请号: US13100612申请日: 2011-05-04
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公开(公告)号: US08377848B2公开(公告)日: 2013-02-19
- 发明人: Tomoyuki Higo , Keisuke Matsuo
- 申请人: Tomoyuki Higo , Keisuke Matsuo
- 申请人地址: JP Tokyo
- 专利权人: Sony Corporation
- 当前专利权人: Sony Corporation
- 当前专利权人地址: JP Tokyo
- 代理机构: SNR Denton US LLP
- 优先权: JP2008-165971 20080625; JP2008-313105 20081209
- 主分类号: B41M5/382
- IPC分类号: B41M5/382 ; B41M5/50
摘要:
A method in which a donor substrate is used in forming a light emitting layer by forming a transfer layer containing light emission material, irradiating a radiation ray to the transfer layer while the transfer layer and a substrate to be transferred face each other, and sublimating or vaporizing the transfer layer so that the transfer layer is transferred to the substrate to be transferred. The donor substrate includes: a base; a photothermal conversion layer arranged on the base; and a heat interfering layer arranged between the base and the photothermal conversion layer, and including two or more layers with refraction index different from each other.
公开/授权文献
- US20110206868A1 DONOR SUBSTRATE AND METHOD OF MANUFACTURING DISPLAY 公开/授权日:2011-08-25
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