发明授权
- 专利标题： GaN-based semiconductor light emitting device
- 专利标题（中）： GaN系半导体发光元件
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申请号： US12890361申请日： 2010-09-24
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公开(公告)号： US08378381B2公开(公告)日： 2013-02-19
- 发明人: Tan Sakong , Cheol Soo Sone , Ho Sun Paek , Suk Ho Yoon , Jeong Wook Lee
- 申请人： Tan Sakong , Cheol Soo Sone , Ho Sun Paek , Suk Ho Yoon , Jeong Wook Lee
- 申请人地址： JP Osaka
- 专利权人： Sumitomo Electric Industries, Ltd.
- 当前专利权人： Sumitomo Electric Industries, Ltd.
- 当前专利权人地址： JP Osaka
- 代理机构： McDermott Will & Emery LLP
- 优先权： KR10-2008-0012244 20080211
- 主分类号： H01L33/32
- IPC分类号： H01L33/32
摘要：
There is provided a GaN-based semiconductor light emitting device including: a substrate; and an n-type GaN-based semiconductor layer, an active layer and a p-type GaN-based semiconductor layer sequentially deposited on the substrate, wherein the active layer includes: a first barrier layer including AlxInyGa1-x-yN, where 0
公开/授权文献
- US20110012145A1 GaN-BASED SEMICONDUCTOR LIGHT EMITTING DEVICE 公开/授权日：2011-01-20
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